The invention discloses an N-type Laterally Diffused
Metal Oxide Semiconductor (NLDMOS) device including the following steps that: a
field oxide is formed above a drift region, a second side of the drift region
field oxide is in lateral contact with a drain region; a first side of the drift region
field oxide is arranged at the bottom of a
polycrystalline silicon gate, and the first side of the drift region field
oxide and a P well are separated by a distance; part of the field
oxide at a top region of the first side of the drift region field
oxide is removed, and the region where the field oxide is removed is filled with a substitute
dielectric layer which has a character that the capacity for blocking
ion implantation of the substitute
dielectric layer is larger than that of the field oxide or a relative
dielectric constant of the substitute
dielectric layer is larger than that of the field oxide; and by using the character of the
large capacity for blocking the
ion implantation, the substitute
dielectric layer makes a
doping concentration of the drift region at the bottom of the first side of the drift region field oxide lower, thereby improving a
breakdown voltage of the NLDMOS device, and by using the character of the large relative dielectric constant, the substitute
dielectric layer makes the
electric field strength at the bottom of the first side of the drift region field oxide reduce, thereby improving the
breakdown voltage of the NLDMOS device. The invention also discloses a manufacture method of the NLDMOS device.