Transversing cathode emitting structural panel display device and its production technique

Abstract

The invention relates to a plate display in transverse cathode emission structure and relative production, wherein it comprises an anode glass panel, a cathode glass panel, and a sealing vacuum chamber surrounded by four glass frames; the anode glass panel is arranged with anode conductive layer and a fluorescent powder layer is above the conductive layer; a support wall structure and a gattering additional element are between the anode glass panel and the cathode glass panel; a control grid, a carbon nanometer tube cathode and transverse cathode emission structure are arranged on the cathode glass panel; the carbon nanometer tube cathode is transverse, the grid is at the side of cathode to control the electron emission of cathode to improve the electron emission efficiency and reduce the working voltage, with lower cost and simple structure.

Description

technical field [0001] The invention belongs to the fields of flat panel display technology, electronic science and technology, vacuum science and technology, integrated circuit science and technology, and nano science and technology, and relates to device fabrication of flat panel field emission displays, in particular to The device manufacturing aspect of flat panel field emission display with carbon nanotube cathode is particularly related to a flat panel display with lateral cathode emission structure and its manufacturing process. Background technique [0002] Display device is a very important human-machine communication interface, and with the rapid development of information technology, people have put forward higher and stricter requirements for display technology and display devices. Carbon nanotubes have a small tip curvature radius, high aspect ratio, extremely high mechanical strength, and can emit a large number of electrons under the action of an applied volta...

AI Technical Summary

Problems solved by technology

The carbon nanotubes prepared by the direct growth method have high density, large field emission current, and better field emission characteristics, which are unmatched by the transplantation method, but are restricted by factors such as substrate materials and growth temperature. There are certain restrictions on the use

The preparation process of the transplantation method is simple, and it can be used for large-area device production without being limited by the substrate material, but the emission performance of the prepared carbon nanotubes is poor.

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