57results about How to "Shorten the optical path length" patented technology

The present invention provides a beam homogenizer for homogenizing energy distribution by making the distance between lenses small to shorten the optical path length with the use of an array lens of an optical path shortened type, and a laser irradiation apparatus using the beam homogenizer. The beam homogenizer is equipped with a front side array lens of an optical path shortened type whose second principal point is positioned ahead on a beam incidence side, a back side array lens of an optical path shortened type whose first principal point is positioned behind on a beam emission side, and a condensing lens, wherein the distance between the second principal point of the front side array lens and the first principal point of the back side array lens is equal to the focal length of the back side array lens.

Method and apparatus for analyzing radiation using analyzers and employing the spatial modulation of radiation dispersed by wavelength or along a line.

A micro lens includes a base material and a lens formed on the base material, wherein the lens is disposed at an opening on the base material, and the opening is formed by covering a surface of the base material with a first monolayer; and the first monolayer has critical surface energy of 22 mN / m or lower and shows non-affinity for a lens material in comparison with a region within the opening, and is fixed to the surface of the base material via a covalent bind.

A light-emitting device with an array of window openings to enhance the light extraction efficiency from this device is provided. This array of window openings is employed to create a much larger sidewall area to enhance the light extraction from the sidewalls of these openings. With this array of window openings, photons trapped due to the total internal reflection can propagate within the device and be extracted from the sidewalls of these openings. A variation of designs can be applied to the array of window openings. Even the shape of these openings can be designed such that the area of the sidewalls is increased. Large-sized light-emitting diodes can improve the light extraction efficiency by employing the array of window openings.

The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.

The present invention provides a highly practicable color purity improving sheet that while preventing unevenness in color and brightness from occurring, allows light with an improved color purity to be used for an image display efficiently and can improve color reproducibility of the image display. The color purity improving sheet includes a light-emitting layer which improves the purity of a color in a target wavelength range by absorbing light in a specific wavelength range other than the target wavelength range and converts the absorbed light to emitted light in the target wavelength range. The surface of the light-emitting layer on at least the light outgoing side is roughened so as to have an arithmetic average surface roughness Ra defined in JIS B 0601 (1994 version) in the range of 0.1 to 100 mum.

A method for the fabrication of a three-dimensional thin-film semiconductor substrate with selective through-holes is provided. A porous semiconductor layer is conformally formed on a semiconductor template comprising a plurality of three-dimensional inverted pyramidal surface features defined by top surface areas aligned along a (100) crystallographic orientation plane of the semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls aligned along the (111) crystallographic orientation plane of the semiconductor template. An epitaxial semiconductor layer is conformally formed on the porous semiconductor layer. The epitaxial semiconductor layer is released from the semiconductor template. Through-holes are selectively formed in the epitaxial semiconductor layer with openings between the front and back lateral surface planes of the epitaxial semiconductor layer to form a partially transparent three-dimensional thin-film semiconductor substrate.

A semiconductor laser includes a gain region; a distributed Bragg reflector (DBR) region including a diffraction grating; an end facet facing the DBR region with the gain region arranged therebetween; a first ring resonator including a first ring-like waveguide and a first optical coupler; a second ring resonator including a second ring-like waveguide and a second optical coupler; and an optical waveguide that is optically coupled to the end facet and extending in a predetermined optical-axis direction. The first and second ring resonators are optically coupled to the optical waveguide through the first and second optical couplers, respectively. Also, the DBR region, the gain region, and the end facet constitute a laser cavity. Further, the first ring resonator has a free spectral range different from a free spectral range of the second ring resonator.

A lighting optical unit having an optical system for irradiating light from a light-source lamp on a predetermined object in a uniform and / or convergent manner includes a reflector for reflecting light from the light-source lamp to provide converged light and an optical assembly for collimating this converged light to provide a bundle of approximately parallel rays, wherein the bundle of approximately parallel rays is made to enter the optical systeml. Thus, in a liquid-crystal projector using a transmission type liquid-crystal panel with micro-lens, while a demand for increasing a quantity of light incident on an effective area of pixel of a liquid-crystal panel is being satisfied, the lighting optical unit can be made compact in size.

The present invention provides a beam homogenizer for homogenizing energy distribution by making the distance between lenses small to shorten the optical path length with the use of an array lens of an optical path shortened type, and a laser irradiation apparatus using the beam homogenizer. The beam homogenizer is equipped with a front side array lens of an optical path shortened type whose second principal point is positioned ahead on a beam incidence side, a back side array lens of an optical path shortened type whose first principal point is positioned behind on a beam emission side, and a condensing lens, wherein the distance between the second principal point of the front side array lens and the first principal point of the back side array lens is equal to the focal length of the back side array lens.

A cellular telephone handset has a built-in image pickup device. A lid shaped reception unit is slidable on a transmission unit or main body between closed and open positions, lies on a first surface of the main body when in the closed position, and uncovers at least part of the first surface when in the open position. An image sensor to pick up an image is contained in the main body. A first lens element receives object light incident thereon. Plural second lens elements in the main body have an optical axis extending in a sliding direction of the lid shaped reception unit, for introducing the object light to the image sensor. A path bending prism introduces the object light to the second lens elements by changing an optical path of the object light from the first lens element. An optical path length of the second lens elements is changeable.

An interferometry system including: a first imaging system that directs a measurement beam at an object to produce a return measurement beam from the object, that directs the return measurement beam onto an image plane, and that delivers a reference beam to the image plane; and a beam combining element in the image plane, said beam combining element comprising a first layer containing an array of sagittal slits and a second layer containing an array of tangential slits, wherein each slit of the array of sagittal slits is aligned with a corresponding different slit of the array of tangential slits, wherein the beam combining element combines the return measurement beam with the reference beam to produce an array of interference beams.

A phosphor point source element comprises a substrate and light emitting phosphor particles arranged on the substrate to provide a circular operational track having a tightly packed particle arrangement adjacent to a flat operational surface of an operational track region. The operational track region is rotated while illuminated at a point to provide a high intensity point source. The tightly packed particle arrangement may be achieved by spinning the phosphor particles in a cavity to compress the phosphor on the substrate at the periphery of the cavity, or by other mechanical compression. The tightly packed phosphor arrangement may either be compressed against a forming element that bounds the cavity, or machined, to provide a flat operational surface. An adhesive binding agent that permeates the phosphor particles may be cured to fix the tightly packed arrangement. A window element may support and / or protect the operational surface, in some embodiments.

An imaging lens unit includes, from an object side, a diaphragm, a first lens, and a second lens placed on an image side of the first lens. The first lens is a positive meniscus lens convex toward the object side, and at least one side of the first lens has an aspherical surface. The second lens is a meniscus lens convex toward the image side, and at least one side of the second lens has an aspherical surface. Further, a maximum value of an angle between a tangent to a surface on the image side of the second lens and a normal to an optical axis is in a range of 65° to 90° within an effective diameter of the second lens.

A semiconductor laser includes a gain region; a distributed Bragg reflector (DBR) region including a diffraction grating; an end facet facing the DBR region with the gain region arranged therebetween; a first ring resonator including a first ring-like waveguide and a first optical coupler; a second ring resonator including a second ring-like waveguide and a second optical coupler; and an optical waveguide that is optically coupled to the end facet and extending in a predetermined optical-axis direction. The first and second ring resonators are optically coupled to the optical waveguide through the first and second optical couplers, respectively. Also, the DBR region, the gain region, and the end facet constitute a laser cavity. Further, the first ring resonator has a free spectral range different from a free spectral range of the second ring resonator.

The present invention is directed to off axis optical signal redirection architectures that employ positionable reflective microstructures (e.g. microelectromechanical (MEM) mirrors) fabricated on one or more substrates. In one embodiment, an optical signal redirection system (10) includes a reflective microstructure array (12) formed on a substrate (30). The reflective microstructure array (12) includes one or more reflective microstructures (14). Each of the reflective microstructures (14) includes an optically reflective surface (20) and is positionable with respect to the substrate (30) in order to orient its reflective surface (20) for redirecting optical signals (24) incoming from one or more originating locations (16) to one or more target locations (18). Each orientation required for a given reflective microstructure (14) to redirect an optical signal (24) incoming from an originating location (16) to a target location (18) is defined by a unit vector (22) that is normal to the reflective surface (20) of such reflective microstructure (14). An average normal vector (26) associated with the reflective microstructure array (12) defined as the average of the set of individual unit normal vectors (22) forms a first non-zero angle θ with respect to the substrate normal (34).