92results about How to "Reduce silicon area" patented technology

A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.

A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on crystallized semiconductor base layer and metal layer for the transistors interconnections and insulation layer. The advantage of this approach is reduction of the over all metal length used to interconnect the various transistors.

A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on crystallized semiconductor base layer and metal layer for the transistors interconnections and insulation layer. The advantage of this approach is reduction of the over all metal length used to interconnect the various transistors.

A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.

A configurable integrated circuit (IC) system comprising: a first die comprising input / output cells; and a configurable logic second die connected by a first plurality of through-silicon-vias (TSVs) to the first die.

A semiconductor device comprising: a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layers; wherein the second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands wherein each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

An extension of the serial / parallel Montgomery modular multiplication method with simultaneous reduction as previously implemented by the applicants, adapted innovatively to perform both in the prime number and in the GF(2q) polynomial based number field, in such a way as to simplify the flow of operands, by performing a multiple anticipatory function to enhance the previous modular multiplication procedures.

A Hard Disk Drive VCM positioning servo loop comprises an oversampling bitstream Digital to Analog converter. The oversampling DAC is a sigma-delta converter which yields higher resolution and lower noise than Nyquist-rate DACs. This allows driving the VCM with finer level of current control for higher track density. This approach can be implemented in the VCM driver chip (“combo chip”) or in the microprocessor device either in hardware or in software, reducing significantly the development and manufacturing cost. Furthermore this approach can be utilized in combination with a VCM actuation method known as “voltage mode drive” wherein the output of the sigma-delta converter represents the voltage to be applied directly to the VCM actuator. Furthermore this approach can be utilized for optical data storage motor positioning servo loops or any other motor positioning servo loops where high dynamic and resolution is needed.

A method of manufacturing a semiconductor wafer, the method comprising: providing a base wafer comprising a semiconductor substrate, metal layers and first alignment marks; transferring a monocrystalline layer on top of said metal layers, wherein said monocrystalline layer comprises second alignment marks; and performing a lithography using an alignment based on a misalignment between said first alignment marks and said second alignment marks.

A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on crystallized semiconductor base layer and metal layer for the transistors interconnections and insulation layer. The advantage of this approach is reduction of the over all metal length used to interconnect the various transistors.

A differential buffer circuit includes a current source, a current sink, and a switching circuit connected to the current source at a first node and connected to the current sink at a second node. The switching circuit is operative to selectively control a direction of current flowing through differential outputs of the buffer circuit in response to at least a first control signal. The buffer circuit further includes a common mode detection circuit and a common mode control circuit. The common mode detection circuit is operative to detect an output common mode voltage of the buffer circuit and to generate a second control signal representative of the output common mode voltage. The common mode control circuit includes a first terminal connected to the current source and a second terminal connected to the current sink. The common mode control circuit is operative to selectively control the output common mode voltage of the buffer circuit as a function of the second control signal.

An amplifier is described which amplifies an input signal according to a defined amplification factor, and which generates an output signal. To reduce an offset fraction of the output signal the amplifier comprises a feedback path which has lowpass characteristics and which returns the output signal in a lowpass-filtered state to an input of the amplifier. The feedback path comprises an amplifier stage as well as at least one Miller capacitance connected between an input and an output of the amplifier stage.

Apparatus and methods calibrate and control detector gain in a Mueller-Muller timing detector. A main signal path includes a Mueller-Muller based timing error detector (MM TED). The main signal path generates a main error signal for clock recovery. A secondary signal path that includes a secondary MM TED. Each signal path samples soft symbols from a received signal. The sampling of the secondary MM TED is deliberately offset in time. A scale factor applied to the main error signal and to a secondary error signal is adaptively adjusted based on a comparison between the main error signal and the secondary error signal.

An extension of the serial / parallel Montgomery modular multiplication method with simultaneous reduction as previously implemented by the applicants, adapted innovatively to perform both in the prime number and in the GF(2q) polynomial based number field, in such a way as to simplify the flow of operands, by performing a multiple anticipatory function to enhance the previous modular multiplication procedures.