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37results about How to "Inhibition can be terminated" patented technology

Apparatus and method for filtering biological samples

An apparatus and method for filtering a biological sample is presented. The apparatus comprises a body member has an upper end and a lower end and defining a workspace therewithin. A first attachment portion is integrally joined to the lower end of the body member for interlockingly receiving a filtered sample container. A second attachment portion is integrally joined to the upper end of the body member for interlockingly receiving a sample transport container. A substantially conically-shaped filter member, located within the workspace, is integrally joined to the lower end of the body member and extends upwardly above the lower end of the body member toward the upper end of the body member. The filter member defines a plurality of openings in its upwardly extending portion.
Owner:ALPHA TEC SYST

Method and apparatus for providing a synchronous interface for an asynchronous service

Methods and apparatus for providing a synchronous interface for an asynchronous service including, in a synchronous interface engine executing on a processor, receiving a request from a client for the asynchronous service, issuing an asynchronous service request to perform the asynchronous service, the asynchronous service request including a unique client identifier, and associating a wait condition with the unique client identifier to indicate to the client to wait for a result of the asynchronous service. Methods and apparatus further include receiving the result of the asynchronous service, the result including the unique client identifier, removing the associated wait condition, and sending the result to the client.
Owner:RAYTHEON CO

Etching method and fabrication method of semiconductor structures

An etching method and a fabrication method of semiconductor structures are provided. The etching method includes forming trenches in a to-be-etched structure, and forming a dielectric layer in the trenches. The etching method further includes etching the dielectric layer in the trenches by an etching process, and controlling at least an etching temperature of the etching process while a polymer is formed on side surface of the to-be-etched structure. During the etching process of the dielectric layer, the polymer undergoes a deposition stage and a removal stage. The deposition stage has a deposition rate of the polymer greater than an etch rate of the polymer, and the removal stage has the deposition rate of the polymer less than the etch rate of the polymer.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
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