36results about How to "Improved magnetostriction" patented technology

A spin valve sensor has an antiparallel (AP) pinned layer structure which has ferromagnetic first and second AP pinned layers that are separated by an antiparallel coupling layer. The first and second AP pinned layers are self-pinned antiparallel with respect to one another without the assistance of an antiferromagnetic (AFM) pinning layer. The spin valve sensor further includes an in-stack longitudinal biasing layer structure which is magnetostatically coupled to the free layer for longitudinally biasing a magnetic moment of the free layer parallel to an air bearing surface and parallel to major planes of the layers of the sensor. The only AFM pinning layer employed is in the biasing layer structure so that when the magnetic spins of the AFM pinning layer are set the orientations of the magnetic moments of the AP pinned layer structure are not disturbed.

A spin valve sensor includes an antiparallel (AP) pinned layer structure which is self-pinned without the assistance of an antiferromagnetic (AFM) pinning layer. A free layer of the spin valve sensor has first and second wing portions which extend laterally beyond a track width of the spin valve sensor and are exchange coupled to first and second AFM pinning layers. Magnetic moments of the wing portions of the free layer are pinned parallel to the ABS and parallel to major planes of the layers of the sensor for magnetically stabilizing the central portion of the free layer which is located within the track width.

A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a resetting process for setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The resetting process sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.

A tunneling magnetic sensing element is provided, in which an increase in the magnetostriction of a free magnetic layer is reduced and the rate of change in resistance is high. A laminate T1 constituting the tunneling magnetic sensing element includes a portion in which a pinned magnetic layer, a barrier layer, and a free magnetic layer are disposed in that order from the bottom. An enhancing layer disposed on the barrier layer side of the free magnetic layer includes a first enhancing layer on the barrier layer side and a second enhancing layer on the soft magnetic layer side, and the Fe content of a CoFe alloy constituting the first enhancing layer is specified to be larger than the Fe content of the CoFe alloy of the second enhancing layer.

A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer having an artificial ferrimagnetic structure are disposed between a magnetostriction-enhancing layer made of a nonmagnetic metal and a nonmagnetic material layer having a higher lattice constant than Cu. CPP magnetic detecting elements allow this structure without reducing the variation in resistance per unit area ΔR·A. Thus, the magnetostriction coefficient of the pinned magnetic layer can be increased from above and below, thereby more firmly fixing the magnetization of the pinned magnetic layer.

A method and apparatus for an improved magnetic read sensor having synthetic or AP pinned layers with high resistance and high magnetoelastic anisotropy is disclosed. A pinned layer includes a cobalt-iron ternary alloy, where a third constituent of the cobalt-iron ternary alloy layer is selected for increasing the resistance and magnetoelastic anisotropy of the cobalt-iron ternary alloy layer.

A grain oriented electrical steel flat according to the invention comprising an insulating coating applied to at least one surface of said flat, the insulating coating comprising a matrix comprising phosphate and silicon dioxide. The insulating layer also includes filler particles comprising a core of high Young's modulus material and a shell surrounding the core and of a material that binds the filler particles to the substrate. In this way, the need to add chromium compounds to the insulating coating of grain oriented electrical steel flats can be avoided.

The invention provides a preparing method of a Tb-Dy-Ho-Fe giant magnetostrictive material. The material comprises the components of Tb1-x-yDyxHoyFez, wherein x is 0.45-0.65, y is 0.08-0.25, and z is 1.9-2.0. The preparing method comprises the steps that first, metal raw materials are mixed, electric arc melting is conducted on the metal raw materials to obtain an alloy ingot, then the alloy ingot is poured and cast, high-temperature homogenizing annealing is conducted, and a furnace is cooled to be at an indoor temperature; then, magnetic heat treatment of stress is applied under the protection of high-purity argon, and at last the tombarthite iron giant magnetostrictive material is obtained. According to the preparing method of the Tb-Dy-Ho-Fe giant magnetostrictive material, the combined action of the stress, a magnetic filed and the temperature is used for adjusting magnetic domain distribution of rod-shaped materials, magnetic domains in the material are oriented according to a certain direction, the magnetic domain structure of the material is optimized, magnetostrictive hysteresis of the material is obviously reduced, the magnetostriction and magnetic field curves are in linear relation, and saturated magnetostriction is increased.

A grain-oriented electrical steel sheet having a texture oriented towards a Goss orientation, where the deviation angle of the crystal orientation measured at two measurement points adjacent to each other at an interval of 1 mm on the sheet surface is expressed as (α 1 beta 1 gamma 1 ) and (α 2 beta 2 gamma 2 ), define the boundary condition BA as |β 2 ‑β 1 |≥0.5°, the boundary condition BB is defined as [(α 2 ‑α 1 ) 2 +(β 2 ‑β 1 ) 2 +(γ 2 ‑γ 1 ) 2 ] 1 / 2 When ≥2.0°, there are grain boundaries that satisfy the boundary condition BA and do not satisfy the boundary condition BB.

A grain-oriented electrical steel sheet having a texture oriented in a Gaussian orientation, and the deviation angle of the crystal orientation measured at two measurement points adjacent to the sheet surface and at an interval of 1 mm is expressed as (α 1 beta 1 γ 1 ) and (α 2 beta 2 γ 2 ), the boundary condition BA is defined as |γ 2 ‑γ 1 |≥0.5°, the boundary condition BB is defined as [(α 2 ‑α 1 ) 2 +(β 2 ‑β 1 ) 2 +(γ 2 ‑γ 1 ) 2 ] 1 / 2 When ≥2.0°, there are grain boundaries that satisfy the boundary condition BA and do not satisfy the boundary condition BB.