The invention relates to the technical field of ultra-precision
machining of semiconductors, in particular to a rapid environment-friendly double-sided
polishing method for a
silicon wafer substrate. The rapid environment-friendly double-sided
polishing method for a
silicon wafer substrate comprises the following steps: (1) rough
polishing: carrying out chemical mechanical polishing on a
silicon wafer substrate by using a rough polishing solution, wherein the rough polishing solution is prepared from
cerium oxide, deionized water, a dispersing agent and a pH adjusting agent; (2) fine polishing: carrying out chemical mechanical polishing on the silicon wafer substrate subjected to rough polishing by using a fine polishing solution, wherein the fine polishing solution is prepared from
cerium oxide, deionized water and a dispersing agent. According to the polishing method, a two-step chemical mechanical polishing method is adopted,
cerium oxide polishing solutions with different particle sizes, different polishing pads and different pH conditions are adopted, the pressure of a polishing disc and the rotation speed ratio of a center gear are controlled, the polishing efficiency of the silicon wafer substrate can be effectively improved, the average thickness difference of the polished substrate is small, and the bending warping degree is low.