There is provided a
system-in-
package (SiP), which includes a substrate obtained by
cutting a
wafer for each
unit system; one or more first electronic devices mounted on the substrate by a heat
radiation plate; a plurality of interlayer dielectrics sequentially formed on the substrate; and one or more second electronic devices buried between or in the interlayer dielectrics on the substrate. A
heat sink may be additionally attached to the bottom surface of the substrate. In this case, a
thermal conduction path including heat pipes connecting the heat
radiation plate on the substrate and the
heat sink is formed. In the SiP, various types of devices are buried at a
wafer level, so that a more integrated
semiconductor device is implemented corresponding to demand for a
fine pitch. Further, the heat
radiation of a device required in high-speed operation and
high heat generation is maximized due to the multi-stepped heat radiation structure, and thus the operation of the device is more stabilized.