The invention provides a manufacturing method of a
semiconductor structure, and the
semiconductor structure. The manufacturing method comprises the steps that a to-be-wired structure is provided, wherein the to-be-wired structure comprises at least one
chip, the
chip is provided with a front face, and the front face of the
chip is provided with a plurality of
welding pads; a first insulating layer is formed on the front face of the chip, the first insulating layer is provided with a plurality of openings, and each opening exposes at least part of one
welding pad; a conductive film layer is formed on the side, deviating from the chip, of the first insulating layer, the conductive film layer covers the surface, deviating from the chip, of the first insulating layer and the part, exposed by the opening, of the
welding pad, and the thickness of the part, located on the side, deviating from the chip, of the conductive film layer is smaller than that of the part, covering the welding pad, of the conductive film layer; the part, exceeding the first insulating layer, of the conductive film layer is removed to obtain a conductive structure which is located in the opening and is in direct contact with the welding pad; and a re-wiring structure is formed on one side, deviating from the chip, of the first insulating layer, and the re-wiring structure is electrically connected with the conductive structure.