The invention relates to a three-dimensional integrated
wafer-level
package structure and a
package method for a high-frequency IPD (Integrated Passive Device) module. The three-dimensional integrated
wafer-level
package structure comprises an PCB (
Printed Circuit Board)
system board and is characterized in that a low-frequency IPD package body is piled on the PCB
system board, and a radio-frequency IPD package body is piled on the low-frequency IPD package body; the PCB
system board is connected with the front surface of the low-frequency IPD package body through a
solder ball; the low-frequency IPD package body is electrically connected with the outside through a
solder ball; the low-frequency IPD package body is connected with the radio-frequency IPD package body through a first
metal soldering pad and a second
metal soldering pad. According to the package structure and the package method, the functions of the radio-frequency IPD module are partitioned, and an IPD
chip is partitioned into two parts including a lower-frequency circuit and a radio-frequency circuit; the packaging of the radio-frequency IPD module with a three-dimensional structure is realized by adopting
wafer-level planar
machining and TSV (
Through Silicon Via) three-dimensional integrated wafer technologies based on a high-resistance
silicon material, and the interference of the radio-frequency IPD module on a
signal circuit on the PCB system board is reduced. In the meantime, the area of occupying the PCB system board is correspondingly reduced, and device and system minimization is facilitated.