The invention relates to a double-layer multi-
channel power synthesis
amplifier based on rectangular
waveguide, which comprises a power divider, a synthesizer and an
amplifier chip array, wherein the
amplifier chip array is clamped between the power divider and the synthesizer, and comprises a
metal strip and a group of
solid-state power amplifier chips fixed on the
metal strip. The power divider and the synthesizer are identical in structure and respectively comprise two cuboid
metal blocks, wherein a bottom face rectangular
waveguide slot is arranged on the bottom face of each upper metal block, and a top face rectangular
waveguide slot is arranged on the top face of each lower metal block. The bottom face rectangular waveguide slot and the top face rectangular waveguide slot are combined to form a rectangular waveguide cavity, and one end of a
coaxial line extends into a
branch waveguide cavity. The input end of each
solid-state power amplifier
chip is connected with the other end of the
coaxial line corresponding to the power divider through a
microstrip line, and the output end of each
solid-state power amplifier chip is connected with other end of the
coaxial line corresponding to the synthesizer. The double-layer multi-
channel power synthesis amplifier has the advantages of being high in synthesizing efficiency, large in
power capacity, wide in working bandwidth, good in radiating performance and the like.