46 results about "Radio frequency microelectromechanical system" patented technology

The invention relates to a radio frequency micro electro mechanical system switch with spring plate contact and a manufacturing method thereof, belonging to the field of electronic circuit technologies and micro electro mechanical system technologies. The invention aims to improve the power processing capability and reliability of a static driven contact type radio frequency micro electro mechanical system switch. In order to achieve the aim, the invention provides a radio frequency micro electro mechanical system switch comprising an anchor region, a cantilever beam and a static driven electrode; the switch comprises at least one set of contact device; the contact device comprises a spring plate contact, a fixed contact and a pit; the spring plate contact is positioned above the fixed contact; and the pit is arranged on the spring plate contact. According to the radio frequency switch provided by the invention, by combining a structure for increasing a contact surface on the basis of improving a contact material, the contact force and contact area are increased, and the contact resistance is reduced, thereby increasing the power processing capability of the switch and improving the reliability of the switch.

The invention relates to a high-reliability capacitance type radio frequency micro-electromechanical system switch without charge injection effect. A coplanar waveguide used as a radio frequency transmission line is produced on a low-loss substrate, a layer of insulating medium thin film covers the middle part of a central electrode of the coplanar waveguide, a switch film bridge spans over the insulating medium thin film, movable bias electrodes which are produced on a ground electrode of the coplanar waveguide are arranged at two ends of the film bridge, fixed bias electrodes are arranged at the outer sides of the movable bias electrodes, and the film bridge and the movable bias electrodes are both made of flexible electroplated gold. By adopting the flexible gold film bridge, the film bridge droops naturally and contacts the insulating medium thin film on the central electrode of the coplanar waveguide to realize the close state of the switch; furthermore, by applying lateral bias voltage between the movable bias electrodes and the fixed bias electrodes, the flexible gold movable bias electrodes can deviate outwards, the film bridge is tensioned so that the middle drooping partof the film bridge is separated from the insulating medium thin film and deviates upwards for a certain height to realize the open state of the switch. Therefore, the charge injection effect generated by the longitudinal bias voltage applied for realizing and maintaining the close state of the switch can be avoided, and the reliability of the switch can be improved.