Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Radio frequency micro electromechanical system switch of electrostatic push-draw type monocrystaline silicon beam

A micro-electromechanical system, push-pull technology, applied in the field of radio frequency MEMS, can solve the problems of thin film stress deformation, high driving voltage, unreachable, etc., and achieve the effect of solving mechanical characteristics, low driving voltage, and reducing the interference of high-frequency signals

Active Publication Date: 2008-10-01
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The research on electrostatically driven RF MEMS switches has always been a hot spot in the business community, because electrostatic driving has zero DC power consumption, short switching time, simple structure, easy processing and easy compatibility with IC technology, which makes its commercialization possible, but restricts its development. The main problems are high driving voltage, thin film stress deformation and short life, which cannot meet the requirements of the industry.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radio frequency micro electromechanical system switch of electrostatic push-draw type monocrystaline silicon beam
  • Radio frequency micro electromechanical system switch of electrostatic push-draw type monocrystaline silicon beam
  • Radio frequency micro electromechanical system switch of electrostatic push-draw type monocrystaline silicon beam

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0040] Such as figure 1 and figure 2 as shown, figure 1 It is a structural schematic diagram of an electrostatically driven single-arm beam switch in the off state (off) in the prior art, figure 2 It is a structural schematic diagram of an electrostatically driven single-arm beam switch in an on state (on) in the prior art. When the voltage between the upper electrode 3 and the lower electrode 4 is 0, the transmission line 1 and the contact point 2 are disconnected, and the switch is in the off state; when a sufficient driving voltage is applied between the upper electrode 3 and the lower electrode 4, the transmission line 1 and the contact point 4 Contact 2 is closed and the switch is in the on state.

[0041] The ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of radio frequency electromechanical system, and discloses an electrostatic push-pull type mono-crystal silicon beam radio frequency micro-electromechanical system switch comprising a switch movable portion and a switch immovable portion; the switch movable portion is formed by a top layer mono-crystal silicon of SOI, upper sides of two ends of the switch movable portion is respectively provided with a lower electrode and a contact; the switch immovable portion is fixedly connected with the top layer mono-crystal silicon of SOI, lower sides of two ends of the switch immovable portion and the position corresponding to the lower electrode of the switch movable portion are provided with upper electrodes, lower sides of two ends of the switch immovable portion and the position corresponding to the contact of the switch movable portion are provided with transmission wires; the upper electrodes and the lower electrodes form a push-pull type structure by respectively applying voltage to the upper electrodes and the lower electrodes of two ends in order to contact or disconnect the transmission wires and the contacts, thus realizing the switch movement. Usage of the invention can reduce the drive voltage, prolong the service life of the switch and make RF MEMS become products more likely.

Description

technical field [0001] The invention relates to the technical field of radio frequency (RF) MEMS in microelectromechanical system (MEMS) application in microelectronic technology, in particular to an electrostatic push-pull single crystal silicon beam radio frequency microelectromechanical system switch. Background technique [0002] Radio frequency micro-electromechanical system (RF MEMS) switches are widely used in switch networks, low-noise and low-power circuits, portable wireless systems, and phased array radars. Compared with traditional solid switches composed of FETs or PIN diodes, electrostatically driven RF MEMS switches have the characteristics of high cut-off frequency, low insertion loss, high isolation and good linearity. [0003] The RF MEMS switch is composed of a mechanical part and an electrical part, and can provide driving force for mechanical movement by electrostatic, magnetostatic, piezoelectric or thermal principles. The electrical part of the switch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01H59/00
Inventor 刘茂哲景玉鹏陈大鹏欧毅叶甜春
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products