The invention discloses a floating geomagnetically controlled memristor simulator based on a transconductance operational amplifier. comprising a port a, a port b, a transconductance operational amplifier U1, a transconductance operational amplifier U2, a current feedback operational amplifier U3, a voltage feedback operational amplifier U4, a capacitor C1, a resistor R1, a resistor R2, a resistorR3, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a resistor R8, a resistor R9, a resistor R10 and a resistor R11.The model of the transconductance operational amplifier U1 is LM13600,and the model of the transconductance operational amplifier U2 is LM13600. The electrical characteristics of the floating geomagnetically controlled memristor simulator port a and the floating geomagnetically controlled memristor simulator port b are equivalent to the port characteristics of a magnetically controlled memristor, one end is not required to be grounded, and the floating geomagnetically controlled memristor simulator port a and the floating geomagnetically controlled memristor simulator port b can be widely applied to design and testing of memristor circuits (memristor chaotic circuits, memristor oscillating circuits and the like).