Simple second order non-autonomous memristor chaotic signal generator

Abstract

The invention discloses a simple second order non-autonomous memristor chaotic signal generator, consisting of a memristor driven by a standard sinusoidal voltage signal and a capacitor parallel circuit. The circuit only comprises two dynamic elements, namely a capacitor C1 and a memristor W. The essence of the simple second order non-autonomous memristor chaotic signal generator disclosed by the invention is to replace a passive LC oscillator in a memristor Chua's circuit by using the standard sinusoidal voltage signal to constitute a simple and novel chaotic signal generator, and a chaotic attractor, a periodic limit cycle and other complex phenomena can be generated by adjusting the parameters of the circuit. The circuit is simple in structure, strong in stability and significant in chaotic properties, and plays a relatively large promotion function to the application development of the memristor circuit.

Description

technical field [0001] The invention relates to a novel second-order non-autonomous memristor chaotic signal generator composed of a memristor and capacitor parallel circuit driven by a standard sinusoidal voltage signal. Background technique [0002] Memristor is a kind of nonlinear element with memory characteristics, and the circuit composed of other three basic linear elements can easily realize chaotic oscillation. Therefore, the nonlinear circuit based on memristor is a hot research topic that many scholars pay attention to. The memristor circuit can be formed by introducing memristor into Chua's circuit, Wien bridge oscillator and other circuits or replacing the nonlinear elements in the original circuit. The memristive circuit has different dynamic characteristics from the general chaotic system, and there are complex nonlinear phenomena such as transient chaos and multi-stability depending on the initial value of the memristive state. At present, the research on me...

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Problems solved by technology

[0003] Nonlinear circuits based on memristors have attracted extensive attention from many scholars in recent years. However, since memristors have not yet been commercialized, memristor circuits in existing research results are mainly based on HP TiO 2 Equivalent implementation circuits of mathematical models such as memristor, quadratic and cubic nonlinear magnetron memristor, and some generalized memristor simulators including LDR, diode bridge, etc. that exhibit the characteristics of memristive elements

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