Very simple floating magnetic control memristor circuit simulation model

A technology of circuit simulation and memristor, applied in instruments, electrical digital data processing, computing, etc., can solve the problems of complex structure of components, not two-port model, two-port voltage cannot exceed, etc., to reduce complexity and element The effect of the number of pieces, no grounding restrictions, and the flexible range of memristor value

Active Publication Date: 2018-11-13
CHENGDU NORMAL UNIV
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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide an extremely simple floating magnetron memristor circuit simulation model, which solves the problem that the existing magnetron memristor circuit simulation model requires one end to be grounded, is not a two-port model, and the voltage of the two ports cannot exceed the model. The supply voltage of internal active devices and the complex structure of the required components

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  • Very simple floating magnetic control memristor circuit simulation model
  • Very simple floating magnetic control memristor circuit simulation model
  • Very simple floating magnetic control memristor circuit simulation model

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Embodiment Construction

[0015] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0016] Such as figure 1 As shown, a minimalist floating magnetron memristor circuit simulation model, including port a, port b, voltage-controlled resistor U R , resistor R and voltage integrator A, voltage-controlled resistor U R Including the voltage control terminal u c and the controlled resistance R u , voltage controlled resistor U R Internal controlled resistance R u The resistance value of the voltage control terminal u c The voltage value control, the voltage integrator A includes the voltage input terminal u and the voltage output terminal u c , voltage controlled resistor U R Internal controlled resistance R u One end of the resistor R is connected to one end of the resistor R, and the other end o...

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Abstract

The invention discloses a very simple floating magnetic control memristor circuit simulation model which comprises a port a, a port b, a voltage controlled resistor UR, a resistor R and a voltage integrator A. The voltage controlled resistor UR comprises a voltage control end uc and a controlled resistor Ru; a resistance value of the controllable resistor Ru in the voltage controlled resistor UR is controlled by a voltage value of the voltage control end uc; and the voltage integrator A comprises a voltage input end u and a voltage output end uc. Electrical characteristics of the ports a and bof the floating magnetic control memristor circuit simulation model are equivalent to characteristics of A and B ports of a magnetic control memristor W, only needs to use existing three elements insimulation software, and is a two-port model; complexity and the element number of an existing magnetic control memristor circuit simulation model are further reduced; and the very simple floating magnetic control memristor circuit simulation model has the advantages of flexible memristive value changing range, no grounding limitation, wide working voltage range and easiness for understanding.

Description

technical field [0001] The patent of the present invention relates to the field of new circuit element model construction, in particular to a minimalist floating magnetron memristor circuit simulation model. Background technique [0002] In 1971, Professor Cai Shaotang of the University of California, Berkeley, starting from the completeness of circuit theory, predicted that in addition to resistance, capacitance and inductance, there was a fourth passive basic circuit element that represented the relationship between charge and magnetic flux, and named it For the memristor (memristor). In 2008, HP Labs published research results in the journal Nature, announcing the physical realization of a two-terminal device with memristor characteristics. The breakthrough of Hewlett-Packard Labs has aroused widespread concern in academia and industry, setting off an upsurge of people's research on memristors. [0003] A memristor is a nonlinear resistor whose resistance value can chan...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/367
Inventor 余波
Owner CHENGDU NORMAL UNIV
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