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Floating geomagnetically controlled memristor simulator based on a transconductance operational amplifier

A technology of operational amplifiers and simulators, which is applied in the direction of instruments, calculations, special data processing applications, etc., can solve problems such as grounding, and achieve the effect of avoiding integral drift

Pending Publication Date: 2019-06-21
CHENGDU NORMAL UNIV
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a floating magnetron memristor simulator based on a transconductance operational amplifier to solve the problem that one end of the existing magnetron memristor simulator needs to be grounded

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  • Floating geomagnetically controlled memristor simulator based on a transconductance operational amplifier
  • Floating geomagnetically controlled memristor simulator based on a transconductance operational amplifier
  • Floating geomagnetically controlled memristor simulator based on a transconductance operational amplifier

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Embodiment Construction

[0017] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0018] like figure 1 As shown, a floating magnetron memristor simulator based on transconductance operational amplifier, including port a, port b, transconductance operational amplifier U 1 , transconductance operational amplifier U 2 , current feedback operational amplifier U 3 , voltage feedback operational amplifier U 4 , capacitance C 1 , resistance R 1 , resistance R 2 , resistance R 3 , resistance R 4 , resistance R 5 , resistance R 6 , resistance R 7 , resistance R 8 , resistance R 9 , resistance R 10 and resistor R 11 , transconductance op amp U 1 The model is LM13600, transconductance operational amplifier U 2 The model is LM13600, transconductance operational amplifier U 1 The 5th and 7th ...

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Abstract

The invention discloses a floating geomagnetically controlled memristor simulator based on a transconductance operational amplifier. comprising a port a, a port b, a transconductance operational amplifier U1, a transconductance operational amplifier U2, a current feedback operational amplifier U3, a voltage feedback operational amplifier U4, a capacitor C1, a resistor R1, a resistor R2, a resistorR3, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a resistor R8, a resistor R9, a resistor R10 and a resistor R11.The model of the transconductance operational amplifier U1 is LM13600,and the model of the transconductance operational amplifier U2 is LM13600. The electrical characteristics of the floating geomagnetically controlled memristor simulator port a and the floating geomagnetically controlled memristor simulator port b are equivalent to the port characteristics of a magnetically controlled memristor, one end is not required to be grounded, and the floating geomagnetically controlled memristor simulator port a and the floating geomagnetically controlled memristor simulator port b can be widely applied to design and testing of memristor circuits (memristor chaotic circuits, memristor oscillating circuits and the like).

Description

technical field [0001] The invention relates to the field of novel circuit element simulator construction, in particular to a magnetron memristor simulator based on a transconductance operational amplifier. Background technique [0002] In 1971, Professor Cai Shaotang of the University of California, Berkeley, starting from the completeness of circuit theory, predicted that in addition to resistance, capacitance and inductance, there was a fourth passive basic circuit element that represented the relationship between charge and magnetic flux, and named it For the memristor (memristor). In 2008, HP Labs published research results in the journal Nature, announcing the physical realization of a two-terminal device with memristor characteristics. The breakthrough of Hewlett-Packard Labs has aroused widespread concern in academia and industry, setting off an upsurge of people's research on memristors. [0003] A memristor is a nonlinear resistor whose resistance value can chang...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 余波
Owner CHENGDU NORMAL UNIV
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