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Third-order absolute value local active memristor circuit model

A circuit model, memristor technology, applied in the direction of instruments, electrical digital data processing, special data processing applications, etc., can solve the problem of few mathematical models, no commercialized actual devices, complex local active characteristics of memristors, etc. problem, to achieve the effect of simple structure

Pending Publication Date: 2019-09-10
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the complex local active characteristics of memristors, they are currently in the state of preliminary theoretical analysis and modeling research. Only a few mathematical models have been proposed, and there are no commercialized actual devices.

Method used

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  • Third-order absolute value local active memristor circuit model
  • Third-order absolute value local active memristor circuit model
  • Third-order absolute value local active memristor circuit model

Examples

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Embodiment Construction

[0016] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] The theoretical starting point of the present invention is a new type of voltage-controlled third-order absolute value local active memristor mathematical model defined below:

[0018]

[0019] i and u represent the current and voltage of the local active memristor, and the variable x represents the state of the memristor.

[0020] According to the mathematical model of local active memristor, its equivalent circuit model can be designed, and its principle block diagram is as follows figure 1 shown.

[0021] Such as figure 1 As shown, the analog equivalent circuit of the voltage-controlled local active memristor in this example includes integrated operational amplifier U1, integrated operational amplifier U2, multipliers U3, U4, U5, U6, U7 and a small amount of resistors and capacitors, and the integrated operational amplifier...

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PUM

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Abstract

The invention discloses a mathematical model of a three-order absolute value local active memristor and an equivalent circuit model thereof. The circuit model comprises an integrated operational amplifier U1, an integrated operational amplifier U2, multipliers U3, U4, U5, U6 and U7, and component resistors and capacitors. The integrated operational amplifier U1 is used for realizing integral operation, addition operation and reverse-phase amplification operation. The integrated operational amplifier U2 is used for absolute value operation, addition operation and inverse operation to obtain a required control signal. The multipliers U3, U4, U5, U6 and U7 realize multiplication of signals. An equivalent circuit of the local active memristor is designed by using the integrated operational amplifier and the multiplier, and an actual local active memristor is replaced for experiment, application and research.

Description

technical field [0001] The invention belongs to the technical field of circuit design, and relates to a local active memristor circuit model in absolute value form, in particular to a mathematical model of a third-order absolute value type local active memristor and the design of its equivalent circuit model and achieve. Background technique [0002] In the field of circuits, local active devices have the ability to amplify extremely small and weak signals, and local active characteristics are the origin of all complexity. Local active memristors can generate more complex and rich dynamic behaviors in circuits to meet the needs of artificial neural networks, chaotic oscillator circuits, etc., and are of great significance for maintaining the oscillation of nonlinear dynamic systems and amplifying small signals . As a non-volatile local active device, it can be used in many fields such as oscillatory circuits, artificial neural networks, non-volatile storage, and digital lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/367Y02D10/00
Inventor 谷文玉王光义王君兰沈怡然
Owner HANGZHOU DIANZI UNIV
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