The invention discloses a solar cell preparation method, and belongs to the technical field of solar cell preparation. The method mainly comprises the following steps that cleaning is conducted; texturing is conducted; boron diffusion is conducted; regional ion implantation is conducted, wherein the back is divided into a comb-shaped N type region and a comb-shaped P type region; annealing is conducted; laser etching is conducted, wherein PN junctions around a silicon wafer are removed, so that PN junctions of the front and the back are separated, the front adopts the main cell PN junction, and the back adopts the secondary cell or protection diode PN junction; by means of PECVD, the two sides of the silicon wafer are coated with films, and anti-reflection films are formed; silk-screen printing is conducted on the front and the back of the silicon wafer, and a front electrode, a first back electrode and a second back electrode are formed through sintering. Accordingly, the influence caused by a bypass diode on the solar cell and component sunlight area is avoided; meanwhile, the solar cell shot spot effect problem can be solved, the generating efficiency is improved, the power generation loss is lowered, and the component operating life is prolonged.