112 results about "Cascode current mirror" patented technology

A voltage reference generator has been discovered that generates a stable reference voltage that is less than the bandgap voltage of silicon for power supply voltages less than 2V, yet provides sufficient voltage headroom to operate a cascaded current mirror. In one embodiment, the voltage reference generator has a power supply rejection ratio of at least 60 dB and has improved noise performance as compared to traditional bandgap circuits. These advantages are achieved by leveraging the low-beta effect of a CMOS bipolar transistor to generate a current proportional to an absolute temperature.

A bias circuit for providing at least first and second bias signals for biasing a cascode current source and / or a cascode current sink includes a resistive element and first, second and third transistors, each transistor having first and second source / drain terminals and a gate terminal. The first source / drain terminal of the first transistor is coupled to the gate terminal, the first bias signal being generated at the first source / drain terminal in response to receiving a first reference current at the first source / drain terminal. A first end of the first resistive element is coupled to the second source / drain terminal of the first transistor. The gate terminal of the second transistor is coupled to the gate terminal of the first transistor, the second bias signal being generated at the first source / drain terminal of the second transistor in response to receiving a second reference current at the first source / drain terminal of the second transistor. The first source / drain terminal of the third transistor is coupled to the second source / drain terminal of the second transistor, the second source / drain terminal of the third transistor is coupled to a second end of the first resistive element, and the gate terminal of the third transistor is coupled to the first source / drain terminal of the second transistor.

A high-speed, low-noise charge pump for use in a phase-locked loop. The charge pump is constituted by first and second cascode current mirrors, as well as first and second switching transistors. The first cascode current mirror includes a first output mirror transistor and a first output cascode transistor. The first switching transistor is interposed between the first output mirror and the first output cascode transistors. During assertion of a first control signal, the first switching transistor is turned on so a first mirror current can flow through an output node. Likewise, the second cascode current mirror includes a second output mirror transistor and a second output cascode transistor. The second switching transistor is interposed between the second output mirror and the second output cascode transistors. During assertion of a second control signal, the second switching transistor is turned on so the second mirror current can flow through the output node.

Methods, circuits, and apparatuses that provide Buffer Amplifier, containing Amplifiers and Buffer Drivers, one or more of the following: ultra low power Buffer Amplifier, capable of having high gain, low noise, high speed, near rail-to-rail input-output voltage span, high sink-source current drive capability for an external load, and able to operate at low power supply voltages. Methods, circuits, and apparatuses that provide regulated cascode (RGC) current mirrors (CM) capable of operating at low power supply and having wide input-output voltage spans.

Disclosed is a CMOS current mirror circuit including a first MOS transistor and a second MOS transistor constituting a current mirror, in which a drain of the first MOS transistor and a gate of the second MOS transistor are connected in common, a source of the first MOS transistor is directly grounded, and a gate of the first MOS transistor is connected to the drain of the first MOS transistor through a third MOS transistor which has a source connected to the drain of the first MOS transistor, a drain connected to the gate of the first MOS transistor, and a gate being biased. The source of the second MOS transistor is directly grounded. Current is input to the drain of the third MOS transistor. The drain current of the second MOS transistor is mirrored by cascode current mirror circuits. An output current is output from the source of a MOS transistor for conversion to a voltage by a circuit that receives the current which outputs a reference voltage.

A charge pump arrangement for a phase-locked-loop has a current source circuit (60) which provides charging current to the phase locked loop, and a current sink circuit (90) which depletes charging current from the phase locked loop. The current source circuit (60) and the current sink circuit (90) have slew rates which have a predetermined relationship. In this way, the charge pump causes substantially no non-linear charge injection in the phase-locked-loop. Cascoded current mirrors (75, 85) are utilised to provide a high voltage with thin gate oxide technology. The arrangement has a relatively small die size. Since bias currents of the arrangement are mirrored according to the output current required, improved transient times are produced, leading to reduced phase noise.

A current mirror circuit includes a first transistor having a source node connected to a reference potential, a second transistor having a source node coupled to a drain node of the first transistor and a gate node connected to a first predetermined potential, an inverted amplification circuit having a non-inverted input node coupled to a drain node of the second transistor, an inverted input node coupled to a second predetermined potential, and an output node coupled to a gate node of the first transistor, a third transistor having a gate node connected to a potential substantially equal to a potential of the gate node of the first transistor, and a fourth transistor having a gate node connected to a potential substantially equal to a potential of the gate node of the second transistor.

A circuit and a method for biasing a compound cascode current mirror (CCCM) that enables high-voltage swing at the output and accurate current mirroring is presented. The CCCM has mirror transistors and cascode transistors which may be of a different technology kind. The drain-source voltage Vds of the mirror transistor on the input leg of the CCCM is held at a voltage Vov that is generated by the biasing circuit; Vov is the overdrive voltage of the input mirror transistor of the CCCM and the value of Vov is maintained by the bias circuit and a feed-back amplifier such that the mirror transistor remains on the edge of its active region, over manufacture deviations and tracks even over operational conditions such as temperature and supply variations. The feed-back amplifier drives the gates of the cascode transistors and uses its feedback node to hold the Vds at Vov.