Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics. In a process for forming a cleave layer and repairing damage caused byion implantation, ions are implanted through a circuit layer of a substrate to form a cleave plane. The substrate is exposed to a hydrogen gas mixture for a first time at a first temperature to repair damage caused by the implanted ions. A cleaving process may then be performed, and the cleaved substrate may be stacked in a 3DIC structure. A stacked device is formed by bonding a die to a first substrate, the die having a smaller width than a width of the first substrate, depositing a planarization material over the die, planarizing the planarization material to form a planarized upper surface, and stacking a third substrate on the planarized upper surface.