Three dimensional integrated circuit

Abstract

Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics. In a process for forming a cleave layer and repairing damage caused byion implantation, ions are implanted through a circuit layer of a substrate to form a cleave plane. The substrate is exposed to a hydrogen gas mixture for a first time at a first temperature to repair damage caused by the implanted ions. A cleaving process may then be performed, and the cleaved substrate may be stacked in a 3DIC structure. A stacked device is formed by bonding a die to a first substrate, the die having a smaller width than a width of the first substrate, depositing a planarization material over the die, planarizing the planarization material to form a planarized upper surface, and stacking a third substrate on the planarized upper surface.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Application Serial No. 16 / 057,747, filed August 7, 2018, which is a continuation-in-part of U.S. Application Serial No. 15 / 899,622, filed February 20, 2018 , U.S. Application No. 15 / 899,622 is a continuation-in-part of U.S. Application No. 15 / 829,442 filed December 1, 2017, and U.S. Application No. 15 / 829,442 is now U.S. Patent No. 10,049,915. Each of these applications is incorporated herein in its entirety. Background technique [0003] Semiconductor substrates in conventional chip stacks are typically thinned using a mechanical backgrinding process. Backgrinding places a high degree of mechanical stress on the device and can result in large thickness variations. Therefore, it is desirable to have other processes for separating substrates. [0004] One method of thinning a substrate is described in US Patent No. 6,316,333 (hereinafter "Bruel"). Bruel describes implanting ion...

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Problems solved by technology

Substrates can be processed at wafer level

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