34results about How to "Characteristic is impaired" patented technology

An optical connector includes a receptacle body 40 having an engage hole 46 formed in a peripheral wall 45 of a chamber 44, a pigtail body 50 having a base body 51 contained in the chamber 44 and a locking protrusion 56 engaged in the engage hole 46 to attach the pigtail body 50, and a ferrule assembly 60 being inserted in a container 53 in the base body 51 so that the ferrule 62 is positioned in a receptacle cylinder 52, and a spring 70 inserted through an opening 54 in the base body 51 and pressing the ferrule 62 forward, wherein a stopper 73 is formed in the spring 70 as an integral part of the spring 70. A locking part 73b included in the stopper 73 is positioned in a recess 63 in the ferrule 62.

A metallic layer material includes at least two metal sheets. Each sheet has a thickness of less than 1.5 mm. Between the sheets, a plastic layer is disposed, which is bonded to the metal sheets. The plastic layer comprises a plastic material and basalt fibers, and the basalt fibers have a modulus of elasticity exceeding 50 GPa. The basalt fibers may constitute 35-75% of the volume of the plastic layer. and may be comprised of 35-55 weight % of SiO2, 10-25 weight % of Al2O3, and 3-10 weight % of MgO. In aerospace applications and other applications requiring good specific strength, stiffness and damage tolerance, the metal sheets may be made of a metal having a tensile strength exceeding 0.20 GPa.

The present invention relates to complexes of a) bi-specific antibodies and antibody fragments against a target protein and b) a digoxigenin conjugated to a therapeutic or diagnostic agent, methods for their production, their use as a delivery platform for therapeutic or diagnostic agents, pharmaceutical compositions containing said antibodies, and uses thereof.

A battery pack includes first and second battery modules arranged in a first direction. In the first battery module, a first heat transfer part and a first heat insulator are disposed between battery cells adjacent in a second direction orthogonal to the first direction. In the second battery module, a second heat transfer part and a second heat insulator are disposed between battery cells adjacent in the second direction. The first heat transfer part constitutes a part of a heat transfer component that is put across and connected to both the first and the second battery modules. The first heat transfer part is connected to one of the battery cells in the first battery module so as to enable heat transfer. The second heat transfer part constitutes another part of the heat transfer component and is connected to one of the battery cells in the second battery module.

A semiconductor device including: a semiconductor layer including an element formation region including an element; an interlayer dielectric layer above the semiconductor layer; an electrode pad above the interlayer dielectric layer; a passivation layer above the electrode pad and having an opening exposing at least part of the electrode pad; and a bump in the opening and covering at least part of the element, the bump including first and second edges, the semiconductor layer having a forbidden region including: a first specific distance outward from a first line directly below the first edge, a second specific distance inward from the first line, a third specific distance outward from a second line directly below the second edge, and a fourth specific distance inward from the second line.

A method for producing a thin film transistor substrate includes the steps of: (i) depositing an amorphous semiconductor film on a transparent insulating substrate; (ii) patterning the amorphous semiconductor film so as to form insular amorphous semiconductor films, the step (ii) including a process (I) for forming, in respective stripe areas each of which is elongate in a first direction in a display area, a plurality of insular semiconductor films whose channel length is in line with the first direction, and a process (II) for forming, in an area including extended portions of the striped areas in a peripheral circuit area, a plurality of insular semiconductor films; (iii) polycrystallizing the insular semiconductor films in the peripheral circuit area so that the insular semiconductor films have high mobility in a second direction and polycrystallizing the insular semiconductor films in the display area so that the insular semiconductor films have high mobility in the first direction; and (iv) forming TFTs by using polycrystalline insular semiconductor films. In at least one peripheral circuit, a channel of a high speed TFT is positioned on a portion other than the extended portions of the stripe areas.

A semiconductor device including: a semiconductor layer; a transistor formed in the semiconductor layer and including a gate insulating layer and a gate electrode, the transistor being a high voltage transistor in which an insulating layer having a thickness greater than the thickness of the gate insulating layer is formed under an end portion of the gate electrode; an interlayer dielectric formed above the transistor; and an electrode pad formed above the interlayer dielectric and positioned over at least part of the gate electrode when viewed from a top side.

A photoelectric conversion device comprises a semiconductor substrate including a photoelectric conversion portion, a silicon oxide film arranged above the photoelectric conversion portion, and an insulating film arranged between the photoelectric conversion portion and the silicon oxide film. An n-type first impurity region constituting part of the photoelectric conversion portion and a p-type second impurity region arranged between the insulating film and the first impurity region are provided in the semiconductor substrate. A portion of the insulating film above the second impurity region, and the second impurity region contain boron. An integrated value of a boron concentration from the surface of the semiconductor substrate to a first position where a boron concentration takes a minimal value in the second impurity region is larger than that from the surface of the semiconductor substrate to an upper surface of the silicon oxide film.

A battery module includes a first heat transfer component and a first thermal expansion material member that are disposed between the battery cells adjacent to each other. The first thermal expansion material member has a thermal conductivity lower than a thermal conductivity of the first heat transfer component and expands at a first predetermined temperature or higher, in which when temperature of the first thermal expansion material member is less than the first predetermined temperature, the adjacent battery cells are connected to each other via a high thermal conductive route including the first heat transfer component and having a first thermal conductivity, and in which when the temperature of the first thermal expansion material member reaches the first predetermined temperature or higher, the adjacent battery cells are connected to each other via a low thermal conductive route having a second thermal conductivity lower than the first thermal conductivity.

A semiconductor device comprising: a semiconductor layer including an element formation region, and first and second spaced apart isolation regions; an element in the element formation region; an interlayer dielectric layer above the semiconductor layer; an electrode pad above the interlayer dielectric layer; a passivation layer above the electrode pad and having an opening which exposes part of the electrode pad; and a bump in the opening and covering part of the element when viewed from a top side, the bump including a first edge when viewed from the top side, the first isolation region being formed in a first region, the first region including a first specific distance outward from a first line directly below the first edge of the bump, the second isolation region being formed in a second region, the second region including a second specific distance inward from the first line.