94results about How to "Avoid thickness thinning" patented technology

A flash memory device according to the present invention includes a semiconductor fin including a top surface and a side surface originated from different crystal planes. The flash memory device comprises: insulating layers having different thicknesses formed on a side surface and a top surface of the semiconductor fin, a storage electrode, a gate insulating layer and a control gate electrode sequentially formed on the insulating layers. A thin insulating layer enables charges to be injected or emitted through it, and a thick insulating layer increases a coupling ratio. Accordingly, it is possible to increase an efficiency of a programming or an erase operation of a flash memory device.

As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO₂ is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.

A display device includes an array of light emitting cells. Each of the light emitting cells includes a first electrode, a second electrode, and an organic light emitting layer located between the first electrode and the second electrode. Banks are above the first electrode that partition the organic light emitting layer to define each of the light emitting cells. The light emitting cells include a peripheral light emitting cell that is located in a peripheral region of the array. The banks include first and second banks that each border the peripheral light emitting cell. The first bank is closer to a periphery of the array than the second bank. An inclination angle of an innermost sidewall of the first bank that is adjacent the peripheral light emitting cell is greater than an inclination angle of an outermost sidewall of the second bank that is adjacent the peripheral light emitting cell.

A hole cutter for cutting a work piece, such as a wood and/or metal work piece, has a substantially cylindrical blade body defining a wall thickness within the range of about 0.032 inch to about 0.038 inch, and a cutting edge formed on one end of the blade body including a plurality of teeth defining an average tooth pitch within the range of about 3.5 TPI to about 5.5 TPI for cutting the work piece and forming chips therefrom. The substantially cylindrical blade body and cutting edge define an average tooth pitch to blade body thickness ratio of at least about 110.

A refrigerator includes a cabinet having a storage space; a barrier to divide the storage space into a freezing compartment and a refrigerating compartment, filled with a heat insulator, and having a depression part formed on one side surface thereof; an evaporator accommodated in a part of the depression part; a blowing unit accommodated in another part of the depression part corresponding to a upper side of the evaporator; a barrier cover to shield the depression part by covering one side surface of the barrier. The depression part includes an evaporator accommodating part to accommodate the evaporator, a blowing unit accommodating part configured to accommodate the blowing unit, and a cold air passage extended from the blowing unit accommodating part to allow the cold air to be guided into the freezing compartment and to refrigerating compartment. The blowing unit accommodating part is depressed greater than the evaporator accommodating part.

The invention provides an LED (Light Emitting Diode) chip provided with a stepped current blocking structure and a fabricating method thereof. The fabricating method comprises the steps of: providing at least one LED epitaxial wafer comprising a substrate and a light emitting epitaxial structure on the LED epitaxial wafer; fabricating the stepped current blocking structure on the surface of the LED epitaxial wafer vertical to a region of a first electrode correspondingly prefabricated; and fabricating transparent conductive layers on the surfaces of the LED epitaxial wafer and the stepped current blocking structure, and then fabricating a first electrode, a second electrode and a protective layer correspondingly. According to the LED chip provided with a stepped current blocking structure and the fabricating method of the LED chip provided with the stepped current blocking structure provided by the invention, the gradient at the edge of the stepped current blocking structure is slowed so that the contact area of the transparent conductive layer and the stepped current blocking structure is increased, the situation that the transparent conductive layer (ITO) on the side wall (at the step) at the edge of the current blocking structure becomes thinner and even breaks can be avoided, the step covering capacity of the transparent conductive layer is improved, the current spreading capacity of the transparent conductive layer is further improved, the electro-optical conversion efficiency of the LED chip is increased, and the brightness of the LED chip is enhanced.

According to example embodiments a transistor includes a channel layer on a substrate, a first channel supply layer on the channel, a depletion layer, a second channel supply layer, source and drain electrodes on the first channel supply layer, and a gate electrode on the depletion layer. The channel includes a 2DEG channel configured to generate a two-dimensional electron gas and a depletion area. The first channel supply layer corresponds to the 2DEG channel and defines an opening that exposes the depletion area. The depletion layer is on the depletion area of the channel layer. The second channel supply layer is between the depletion layer and the depletion area.

A non-light-emitting cell 100c is provided between pixels 100a and 100b. Ink for forming an organic light-emitting layer is dripped substantially simultaneously into sub-pixels 100a1, 100a2, and 100a3 in the pixel 100a and a sub-pixel 100b1 in the pixel 100b. On the other hand, such ink is not dripped into the non-light-emitting cell 100c since the organic light-emitting layer is not formed in the non-light-emitting cell 100c. Regarding two banks 105c and 105d defining the sub-pixel 100a3, an inclination angle θd3 of a wall 105d3 of the bank 105d is larger than an inclination angle θc3 of a wall 105c3 of the bank 105c. Similarly, regarding banks 105e and 105f defining the sub-pixel 100b1, an inclination angle θe1 of a wall 105e1 of the bank 105e is larger than an inclination angle θf1 of a wall 105f1 of the bank 105f.

An accumulator in which a pressure sealed chamber and a pressure flow-in chamber are formed by an operation member including a metallic bellows provided within a housing constituted by a gas end cover and a bottomed tubular shell, wherein a cross sectional inner outline of a peripheral edge portion of the gas end cover is an oval shape which is concave to the pressure sealed chamber side, and a dead space is not formed, so that a capacity of a volume adjusting spacer is reduced by eliminating a dead space, a working step is reduced by simplifying a shape of the gas end cover, and a margin of welding penetration depth is increased by thickening of a backing metal portion.

A honeycomb structural body having a plurality of cells and partition walls defining the cells, wherein a cross-section of each partition wall perpendicular to the flow direction of a fluid to be permeated has a grille shape of which gratings cross in x axis and Y axis directions, and there are at least two kinds of cells different in their cross-sectional areas perpendicular to the flow direction of a fluid to be filtered by virtue of changing intervals of the partition walls in the x axis direction and/or intervals of the partition walls in the y axis direction, as predetermined. Each cell is defined by two parallel partition walls having the same length and another two parallel partition walls having the same length crossing each other and being formed at the predetermined intervals. A die usable for forming such a honeycomb structure is also disclosed.

A photoelectric conversion device comprising: a substrate; a conducting layer; a photoelectric conversion layer; and a transparent conducting layer provided in this order, wherein the transparent conducting layer has a thickness of not more than ⅕ of that of the photoelectric conversion layer.

The present invention provides a light-emitting element sandwiching a composite layer in which an organic compound and an inorganic compound are mixed between a first electrode and a second electrode, where the composite layer includes a first layer including a first organic compound and a first inorganic compound that exhibits an electron accepting property to the first organic compound (serves as an electron acceptor), a second layer including a second organic compound and a second inorganic compound, and a third layer including a third organic compound and a third inorganic compound that exhibits an electron donating property to the third organic compound (serves as an electron acceptor).

A door frame for a vehicle includes a lower frame for guiding an up/down movement of a window glass, a main frame connected to the lower frame for determining a top dead center of the window glass, and a bracket for attaching a door mirror secured to the lower frame and the main frame, the bracket having a bottom portion and a pair of opposing side wall portions extended from both sides of the bottom portion, and each having a thickness thicker than that of the bottom portion.

Disclosed is a conductive paste for a multilayer electronic part to be screen-printed on a ceramic green sheet, comprising 70-95 weight % of conductive metal powder, a resin, and a solvent, wherein a phase angle δ in a dynamic viscoelastic measurement is within a range of from 43° to 72° at a frequency of 0.05 Hz and is within a range of 63° or less at a frequency of 30 Hz.