The invention relates to a
semiconductor device used for an SOI (
silicon-on-insulator) high-
voltage integrated circuit, belonging to the field of power
semiconductor devices. The
semiconductor device comprises a semiconductor substrate layer, a
dielectric buried layer and a
silicon top layer, wherein at least high-
voltage LIGBT (lateral
insulated gate bipolar transistor), NLDMOS (N-type lateral double-diffused
metal-
oxide semiconductor) and PLDMOS (P-type lateral double-diffused
metal-
oxide semiconductor) devices are integrated in the
silicon top layer; the thickness of the
dielectric buried layer is not more than 5 mum; the thickness of the silicon top layer is not more than 20 mum; multiple incontinuous high-concentration N<+> regions (
doping concentration is not lower than 1e16e cm<-3>) are formed at the bottoms of the high-
voltage devices and the silicon top layer above the surface of the
dielectric buried layer; the high-voltage devices are isolated by
dielectric isolation regions; low-voltage MOS (
metal oxide semiconductor) devices can also be integrated in the device; the high-voltage devices and low-voltage devices are isolated by the
dielectric isolation regions; and different low-voltage devices are isolated by field oxidation
layers. The
semiconductor device has the advantages that: because of the introduction of the multiple incontinuous high-concentration N<+> regions, the
electric field of the silicon top layer is weakened and the
electric field of the dielectric buried layer is enhanced at the same time, the
breakdown voltage of the device is greatly improved, and the device can be applied in high-voltage integrated circuits in the automobile
electronics, consumption
electronics, green lighting, industrial control, power
supply management, display driving and other fields.