42results about How to "Suppress shadows" patented technology

A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate.

A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

A developing apparatus includes: an agitating chamber agitating a developer; a developing chamber provided with an inlet to which the developer is supplied from the agitating chamber and an outlet from which the developer is returned to the agitating chamber; a developer carrying member; a rotatable developer supplying member supplying the developer to the developer carrying member; a developer conveying member, provided above the center of rotation of the developer supplying member in the developing chamber, for conveying the developer in a longitudinal direction of the developer carrying member, wherein, in a vertical cross-sectional area of a region vertically above the center of rotation of the developer supplying member of the developing chamber, excluding a developer conveying region by the developer conveying member, a cross-sectional area S1 upstream in the developer conveying direction and a cross-sectional area S2 downstream in the developer conveying direction satisfy a relationship of S1<S2.

An image sensing apparatus includes an image sensing device having a plurality of pixels, a smoothing unit that smoothes a dark image signal acquired with the image sensing device shielded from light; a subtraction unit that subtracts a second dark image signal from the dark image signal; an extraction unit that extracts, as a defective pixel of the image sensing device, a pixel of which an obtained difference is outside a preset range; and a correction unit that corrects, out of subject image signals output from the image sensing device, an image signal of the defective pixel extracted by the extracting unit, using an image signal of a pixel peripheral to the defective pixel.

In an organic EL display device, a resistance of a cathode electrode of OLEDs is substantially reduced while maintaining a higher opening ratio of pixels as an entire display area. A reference power supply line is formed on a glass substrate, and receives a reference potential for driving the OLED. The OLED is formed on the glass substrate where the reference power supply line is formed, and has a structure in which a lower electrode, an organic material layer, and an upper electrode that is a cathode electrode common to plural pixels are laminated on each other in the order from the bottom. In some of the plural pixels, a cathode contact that penetrates through the organic material layer, and electrically connects the upper electrode to the reference power supply line is formed within an opening area corresponding to a W sub-pixel.

The present invention provides a compact and high-performance image pickup lens having a fast F-number and capable of suppressing shading by using a curved projection surface. An image pickup lens 10 includes a first lens L1 having a positive refractive power, a second lens L2 having a negative refractive power, a third lens L3 having a positive or negative refractive power, a fourth lens L4 having a positive or negative refractive power, and a fifth lens L5 having a negative refractive power. With regard to the fifth lens L5 among these lenses, at least one surface is aspherical. The above-described image pickup lens 10 satisfies a conditional expression (1): −2.50<f5 / f<−0.10 . . . (1) where f5 is a focal length of the fifth lens L5 and f is a focal length of the entire system of the image pickup lens 10.

The depositing apparatus of the invention comprises a depositing source used for accepting deposited substances; and a plurality of nozzles arranged on one side of the depositing source in a first direction and used for ejecting the deposited substances to opposite substrates. The depositing source is divided into a central area and peripheral areas at two ends of the central area with the first direction as a standard. The depositing apparatus also comprises nozzle tops arranged on the nozzles of each peripheral area in a detachable mode, allowing the tail end surfaces ejecting the deposited substances to form inclined angles with the surface of the substrates in the first direction and facing the outer side direction of the depositing source. According to the embodiment of the invention, by increasing the incidence angles of the deposited substances to the substrates, the shadow permeated by the deposited substances between deposition masks and substrates can be restrained, deposition remains can be reduced and deposition uniformity and efficiency can be raised, and thereby the high resolution of an organic light emitting display can be easily realized.

An image pickup lens 10 includes a first lens L1, a second lens L2, and a third lens L3. An image pickup surface I of a solid-state image sensor 51 is curved into the shape of a shallow concave spherical surface. By forming an image side surface 3b of the third lens L3, which is the lens nearest to the image side, into an aspherical shape, it is possible to make a curvature of field suitable to the curved image pickup surface I while securing excellent telecentric characteristics. The above image pickup lens 10 satisfies conditional expression (1) where THID is a thickness of an outermost periphery PA of the lens L3 nearest to the image side along an optical axis direction AX and THIC is a thickness of the lens L3 nearest to the image side on the optical axis AX.

A developing apparatus includes: an agitating chamber agitating a developer; a developing chamber provided with an inlet to which the developer is supplied from the agitating chamber and an outlet from which the developer is returned to the agitating chamber; a developer carrying member; a rotatable developer supplying member supplying the developer to the developer carrying member; a developer conveying member, provided above the center of rotation of the developer supplying member in the developing chamber, for conveying the developer in a longitudinal direction of the developer carrying member, wherein, in a vertical cross-sectional area of a region vertically above the center of rotation of the developer supplying member of the developing chamber, excluding a developer conveying region by the developer conveying member, a cross-sectional area S1 upstream in the developer conveying direction and a cross-sectional area S2 downstream in the developer conveying direction satisfy a relationship of S1<S2.

The vapor deposition source includes a containing unit configured to contain vapor deposition particles and a plurality of nozzles aligned in a line form along an X axis direction, and in the vapor deposition source, the plurality of nozzles at an end portion in the X axis direction of the containing unit protrude in an oblique direction toward the end portion in the X axis direction, arrangement density of nozzles provided at the end portion in the X axis direction of the containing unit is higher than arrangement density of nozzles provided at a center portion of the containing unit, and a line connecting upper end faces of the nozzles adjacent to each other at the end portion in the X axis direction of the containing unit is linearly provided.

A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

In a top emission type organic EL display device, brightness gradient in a screen is reduced while keeping a screen brightness. A reflection film is formed under a lower electrode and the light from an organic EL layer is emitted through an upper electrode. Light absorption of the upper electrode is larger on the side of a shorter wavelength. When a film thickness of the upper electrode is enlarged in order to reduce the brightness gradient in a screen, the film thicknesses of the upper electrodes for a red pixel and a green pixel are enlarged without enlarging the film thickness of the upper electrode for a blue pixel. This makes it possible to reduce the brightness gradient as well as to suppress the light absorption of the upper electrode.

A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate.

A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

The present invention provides a compact and high-performance image pickup lens having a fast F-number and capable of suppressing shading by using a curved projection surface. An image pickup lens 10 includes a first lens L1 having a positive refractive power, a second lens L2 having a negative refractive power, a third lens L3 having a positive or negative refractive power, a fourth lens L4 having a positive or negative refractive power, and a fifth lens L5 having a negative refractive power. With regard to the fifth lens L5 among these lenses, at least one surface is aspherical. The above-described image pickup lens 10 satisfies a conditional expression (1): −2.50<f5 / f<−0.10 . . . (1) where f5 is a focal length of the fifth lens L5 and f is a focal length of the entire system of the image pickup lens 10.

A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

An imaging device 100 is equipped with an image acquisition unit 51, a first calculation unit 52 and a correction information calculation unit 53. The image acquisition unit 51 acquires image data including a luminance component and color components, via an optical system. The first calculation unit 52 detects shading of the luminance component included in the image data, and detects shading of the color difference components. The correction information calculation unit 53 calculates luminance shading correction coefficients and color difference shading correction coefficients. The correction information calculation unit 53 then converts the calculated color difference shading correction coefficients so as to have predetermined ratios with respect to the calculated luminance shading correction coefficients. A correction processing unit 62 corrects plural sets of image data on the basis of the converted color difference shading correction coefficients, and then performs pixel addition of the images.

The deposition device according to the present invention includes: a deposition source for containing deposition materials; and a plurality of nozzles arranged on one side of the deposition source along a first direction and used for spraying the deposition materials onto an opposite substrate. The deposition source is divided into a central area and peripheral areas at two ends of the central area based on the first direction. The deposition device further includes: detachably formed on the nozzles arranged on the respective peripheral regions, and such that an end surface for spraying the deposition substance is formed to form an inclination with the substrate surface along the first direction Angle and the top of the nozzle toward the outside of the deposition source. According to the embodiments of the present invention, by increasing the incident angle of the deposition material incident on the substrate, the shadow phenomenon of the deposition material penetrating into the deposition mask and the substrate can be suppressed, the deposition margin can be reduced, and the deposition uniformity and deposition efficiency can be improved. Thereby, high resolution of the organic light emitting display device can be easily realized.