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172results about How to "Limited degree" patented technology

Matrix compositions for controlled delivery of drug substances

A novel matrix composition for pharmaceutical use. The matrix composition has been designed so that it is especially suitable in those situation where an improved bioavailability is desired and / or in those situation where a slightly or insoluble active substance is employed. Accordingly, a controlled release pharmaceutical composition for oral use is provided in the form of a coated matrix composition, the matrix composition comprising i) a mixture of a first and a second polymer that have plasticizing properties and which have melting points or melting intervals of a temperature of at the most 200° C., the first polymer being selected from the group consisting of polyethylene glycols and polyethylene oxides, and the second polymer being selected form block copolymer of ethylene oxide and propylene oxide including poly(ethylene-glycol-b-(DL-lactic acid-co-glycolic acid)-b-ethylene glycol (PEG-PLGA PEG), poly((DL-lactic acid-co-glycolic acid)-g-ethylene glycol) (PLGA-g-PEG), poloxamers and polyethylene oxide-polypropylene oxide (PEO-PPO), ii) a therapeutically, prophylactically and / or diagnostically active substance, the matrix composition being provided with a coating having at least one opening exposing at one surface of said matrix, wherein the active substance is released with a substantially zero order release.
Owner:EGALET LTD

Fragrance containing fiber

Described is a fragrance-containing and fragrance-emitting polymeric fiber which optionally contains (i) at least one antimicrobial agent; and (ii) at least one compatible coloring material or color-forming material which is useful in the ascertainment of the exhaustion or substantial reduction of fragrance, produced by either (i) a processing comprising the steps of:(a) co-extruding fragrance and optionally (i) antimicrobial agent and/or (ii) at least one compatible coloring material or color-forming material which is useful for ascertainment of the exhaustion or substantial reduction of fragrance with a thermoplastic polymer to form an extrudate;(b) forming fragrance and (optionally (i) antimicrobial agent and/or (ii) at least one compatible coloring material or color-forming material which is useful for ascertainment of the exhaustion or substantial reduction of fragrance agent)-emitting particles which may or may not be foamed from the extrudate; and(c) extruding a fiber of from about 3 denier up to about 60 denier from the thus-formed particles;or (ii) a process comprising the steps of:(a) forming fragrance-emitting particles, foamed or not foamed, from a mixture of fragrance and thermoplastic polymer; and then(b) extruding a fiber of from about 3 denier up to about 60 denier from the thus-formed particles.
Owner:INTERNATIONAL FLAVORS & FRAGRANCES

Methods and apparatus for presbyopia correction using ultraviolet and infrared lasers

Presbyopia is treated by a system using various lasers to remove a portion of the scleral tissue and increase the accommodation of the presbyopic patient's eye. Stable accommodation is achieved by the filling of the sub-conjunctiva tissue to the laser-ablated scleral areas. The proposed laser wavelength ranges from ultraviolet to infrared of (0.15-0.36) microns, (0.5-1.4) microns and (0.9-3.2) microns. Both scanning and fiber delivered systems are proposed to generate the ablation patterns. Laser ablation of the sclera may be conducted with or without opening the conjunctiva layer.
Owner:SURGILIGHT

Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device

A production method of a GaN-based compound semiconductor having excellent crystallinity and a GaN-based semiconductor device produced therefrom. A discrete SiN buffer body is formed on a substrate, and a GaN buffer layer is formed thereon at low temperatures and a GaN semiconductor layer is then formed at high temperatures. By forming the discrete SiN buffer body, the crystal growth, which is dependent on the substrate, of the low-temperature buffer layer is inhibited and monocrystallization is promoted to generate seed crystals used at the time of growing the GaN buffer layer. Further, by forming SiO2 discretely between the substrate and the SiN buffer body or by forming InGaN or a superlattice layer on the GaN semiconductor layer, distortion of the GaN semiconductor layer is reduced.
Owner:NITRIDE SEMICON

Matrix compositions for controlled delivery of drug substances

A novel matrix composition for pharmaceutical use. The matrix composition has been designed so that it is especially suitable in those situation where an improved bioavailability is desired and / or in those situation where a slightly or insoluble active substance is employed. Accordingly, a controlled release pharmaceutical composition for oral use is provided in the form of a coated matrix composition, the matrix composition comprising i) a mixture of a first and a second polymer that have plasticizing properties and which have melting points or melting intervals of a temperature of at the most 200° C., the first polymer being selected from the group consisting of polyethylene glycols and polyethylene oxides, and the second polymer being selected form block copolymer of ethylene oxide and propylene oxide including poly(ethylene-glycol-b-(DL-lactic acid-co-glycolic acid)-b-ethylene glycol (PEG-PLGA PEG), poly((DL-lactic acid-co-glycolic acid)-g-ethylene glycol) (PLGA-g-PEG), poloxamers and polyethylene oxide-polypropylene oxide (PEO-PPO), ii) a therapeutically, prophylactically and / or diagnostically active substance, the matrix composition being provided with a coating having at least one opening exposing at one surface of said matrix, wherein the active substance is released with a substantially zero order release.
Owner:EGALET LTD

Targeted delivery of RNA interference molecules

Compositions for the treatment and / or prevention of IgE-mediated disorders in a mammal by means of RNA interference are provided, together with methods for the use of such compounds. The inventive compositions comprise a binding agent that specifically binds to a target internalizable antigen that is expressed on the surface of a target cell of interest and a genetic construct that is capable of expressing a small interfering nucleic acid molecule (siNA) that suppresses expression of a target gene within the target cell, whereby, after binding to the target antigen, the binding agent and genetic construct are internalized into the cell, and the genetic construct released.
Owner:GENESIS RES & DEV

Biological Polysiloxanes

The present invention relates to a macromonomer having a polydimethylsiloxane backbone that has a mol % dimethyl siloxanes, b mol % siloxanes substituted with -K-RIM, c mol % siloxanes substituted with -K-RIM-Z and d mol % siloxanes substituted with -L-Z, and in which the terminal siloxane groups are tri-substituted with R, wherein RIM is a refractive index modifying group; Z is a free radically polymerisable group; K is a spacer group; L is optional and is a spacer group; each R is independently selected from an RIM, a lower alkyl group, hydrogen or Z; and a is a molar percentage of the macromonomer which is in the range of from 0 to 95 mol %; b is a molar percentage of the macromonomer which is in the range of from 5 to 99 mol %; c is a molar percentage of the macromonomer which is in the range of from 0 to 2 mol %; and d is a molar percentage of the macromonomer which is in the range of from 0 to 2 mol %; with the proviso that c and d are not both 0 mol %.
Owner:THE VISION CRC LTD

Integrated circuit output buffers having control circuits therein that utilize output signal feedback to control pull-up and pull-down time intervals

Integrated circuit output buffers include primary and secondary pull-down transistors and an output signal line electrically coupled to a drain of the primary pull-down transistor and a drain of the secondary pull-down transistor. A preferred control circuit is also provided. The control circuit turns on the primary pull-down transistor during first and second consecutive portions of a pull-down time interval and uses a signal fed back from the output signal line to control the timing of when a gate of the secondary pull-down transistor is electrically connected to a drain of the secondary pull-down transistor during the first portion of the pull-down time interval and also control the timing of when the gate electrode of the secondary pull-down transistor is electrically connected to a source of the secondary pull-down transistor during the second portion of the pull-down time interval. A pull-down portion of the control circuit may include a gate pull-up transistor having a drain electrically connected to the drain of the secondary pull-down transistor and a source electrically connected to a gate of the secondary pull-down transistor, and a gate pull-down transistor having a drain electrically connected to the gate of the secondary pull-down transistor and a source electrically connected to a source of the secondary pull-down transistor. These gate pull-up and pull-down transistors can be utilized to selectively turn on the secondary pull-down transistor during a first leading portion of a pull-down time interval and then turn off the secondary pull-down transistor during a second trailing portion of the pull-down time interval.
Owner:INTEGRATED DEVICE TECH INC

Semiconductor device provided with thin film transistor and method for manufacturing the semiconductor device

A semiconductor device includes at least one thin-film transistor 116, which includes: a crystalline semiconductor layer 120 including a region 110 to be a channel region and source and drain regions 113; a gate electrode 107 for controlling the conductivity of the region 110 to be a channel region; a gate insulating film 106 arranged between the semiconductor layer 120 and the gate electrode 107; and source and drain electrodes 115 connected to the source and drain regions 113, respectively. At least one of the source and drain regions 113 contains an element to be a donor or an acceptor and a rare-gas element, but the region 110 to be a channel region does not contain the rare-gas element. The atomic weight of the rare-gas element is greater than that of the element to be a donor or an acceptor. The concentration of the rare-gas element in the at least one region as measured in the thickness direction thereof decreases continuously from the upper surface of the at least one region toward its lower surface.
Owner:SHARP KK
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