Product
Feature
Quick Research
Generate reliable direction feasibility study reports for your R&D in just a few steps.
Technical Q&A
Discover and master advanced knowledge NOW. Basics, ideas, possibilities, all at once.
Find Solutions
As an expert in R&D theories, this can generate solutions to your technical problems instantly.
Evaluate Feasibility
Analyze your overall solution with one click, know your potential R&D risks in advance.
Monitor Landscape
Get weekly tech updates, stay abreast of the latest tech innovations and key insights.
Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
209results about How to "Highly reliable semiconductor device" patented technology
Efficacy Topic
Property
Owner
Technical Advancement
Application Domain
Technology Topic
Technology Field Word
Patent Country/Region
Patent Type
Patent Status
Application Year
Inventor
Semiconductor device
ActiveUS20130320334A1Inhibited DiffusionLarge energy gapTransistorSemiconductor/solid-state device manufacturingPower semiconductor devicePower flow
A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor device which includes a first oxide semiconductor layer which is in contact with a source electrode layer and a drain electrode layer and a second oxide semiconductor layer which serves as a main current path (channel) of a transistor is provided. The first oxide semiconductor layer serves as a buffer layer for preventing a constituent element of the source and drain electrode layers from diffusing into the channel. By providing the first oxide semiconductor layer, it is possible to prevent diffusion of the constituent element into an interface between the first oxide semiconductor layer and the second oxide semiconductor layer and into the second oxide semiconductor layer.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
InactiveUS20140042434A1Stable electrical characteristicsImprove reliabilityTransistorSolid-state devicesPhysicsOxide semiconductor
A highly reliable semiconductor device exhibiting stable electrical characteristics is provided. Further, a highly reliable semiconductor device is provided. Oxide semiconductor films are stacked so that the conduction band has a well-shaped structure. Specifically, a transistor having a multi-layer structure is manufactured in which a second oxide semiconductor film having a crystalline structure is stacked over a first oxide semiconductor film, and at least a third oxide semiconductor film is provided over the second oxide semiconductor film. When a buried channel is formed in the transistor, few oxygen vacancies are generated and the reliability of the transistor is improved.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS20150177789A1Improved browsabilityImprove reliabilityDischarge tube luminescnet screensDigital data processing detailsDevice materialEngineering
A highly portable semiconductor device and the like providing improved browsability of display. Provided is a semiconductor device including a flexible display panel, a first housing supporting a first region of the display panel, a second housing supporting a second region of the display panel, and a flexible base material firmly attached to the first housing. The display panel can be deformed into an open position where the first and second regions are substantially on the same plane or into a folded position where the first and second regions overlap with each other. The second housing includes a groove portion where the flexible base material can partly slide. Part of the flexible base material is inserted into the groove portion in the open position. The part of the flexible base material which is inserted into the groove portion is at least partly withdrawn in a deformation into the folded position.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and manufacturing method thereof
ActiveUS20110136301A1Improve barrier propertiesPromote absorptionElectroluminescent light sourcesSemiconductor/solid-state device manufacturingOxide semiconductorOxide
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS20140001465A1High field-effect mobilityImprove reliabilitySolid-state devicesSemiconductor devicesHigh concentrationHigh field
High field-effect mobility is provided for a semiconductor device including an oxide semiconductor. Further, a highly reliable semiconductor device including the transistor is provided. In a transistor in which a stack of oxide semiconductor layers is provided over a gate electrode layer with a gate insulating layer provided therebetween, an oxide semiconductor layer functioning as a current path (channel) of the transistor and containing an n-type impurity is sandwiched between oxide semiconductor layers having lower conductivity than the oxide semiconductor layer. In the oxide semiconductor layer functioning as the channel, a region on the gate insulating layer side contains the n-type impurity at a higher concentration than a region on the back channel side. With such a structure, the channel can be separated from the interface between the oxide semiconductor stack and the insulating layer in contact with the oxide semiconductor stack, so that a buried channel can be formed.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS8952381B2Improve mobilityHighly reliable semiconductor deviceTransistorSolid-state devicesHigh concentrationPower semiconductor device
High field-effect mobility is provided for a semiconductor device including an oxide semiconductor. Further, a highly reliable semiconductor device including the transistor is provided. In a transistor in which a stack of oxide semiconductor layers is provided over a gate electrode layer with a gate insulating layer provided therebetween, an oxide semiconductor layer functioning as a current path (channel) of the transistor and containing an n-type impurity is sandwiched between oxide semiconductor layers having lower conductivity than the oxide semiconductor layer. In the oxide semiconductor layer functioning as the channel, a region on the gate insulating layer side contains the n-type impurity at a higher concentration than a region on the back channel side. With such a structure, the channel can be separated from the interface between the oxide semiconductor stack and the insulating layer in contact with the oxide semiconductor stack, so that a buried channel can be formed.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device including oxide semiconductor stack with different ratio of indium and gallium
ActiveUS9496408B2Avoid changeImprove reliabilityTransistorSemiconductor/solid-state device manufacturingPower semiconductor deviceIndium
A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor device which includes a first oxide semiconductor layer which is in contact with a source electrode layer and a drain electrode layer and a second oxide semiconductor layer which serves as a main current path (channel) of a transistor is provided. The first oxide semiconductor layer serves as a buffer layer for preventing a constituent element of the source and drain electrode layers from diffusing into the channel. By providing the first oxide semiconductor layer, it is possible to prevent diffusion of the constituent element into an interface between the first oxide semiconductor layer and the second oxide semiconductor layer and into the second oxide semiconductor layer.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS20130334523A1High field-effect mobilityImprove reliabilityTransistorSolid-state devicesCharge carrierBottom gate
High field-effect mobility is provided for a transistor including an oxide semiconductor. Further, a highly reliable semiconductor device including the transistor is provided. In a bottom-gate transistor including an oxide semiconductor layer, an oxide semiconductor layer functioning as a current path (channel) of the transistor is sandwiched between oxide semiconductor layers having lower carrier densities than the oxide semiconductor layer. In such a structure, the channel is formed away from the interface of the oxide semiconductor stacked layer with an insulating layer in contact with the oxide semiconductor stacked layer, i.e., a buried channel is formed.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS20140042435A1Stable electrical characteristicsImprove reliabilitySolid-state devicesPhotovoltaic energy generationPower semiconductor deviceConduction band
A highly reliable semiconductor device exhibiting stable electrical characteristics is provided. Further, a highly reliable semiconductor device is provided. Oxide semiconductor films are stacked so that the conduction band has a well-shaped structure. A second oxide semiconductor film having a crystalline structure is provided over the first oxide semiconductor film and a third oxide semiconductor film is provided over the second oxide semiconductor film. The bottom of a conduction band in the second oxide semiconductor film is deeper from a vacuum level than the bottom of a conduction band in the first oxide semiconductor film and the bottom of a conduction band in the third oxide semiconductor film.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and manufacturing method thereof
ActiveUS20160218219A1Excellent electrical propertiesEasy to manufactureTransistorSolid-state devicesSemiconductorSemiconductor device
A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.
Owner:SEMICON ENERGY LAB CO LTD
Method for manufacturing semiconductor device
InactiveUS20110215325A1Little changeLow reliabilityTransistorSolid-state devicesHydrogen atomDevice material
A highly purified oxide semiconductor layer is formed in such a manner that a substance that firmly bonds during film formation to an impurity containing a hydrogen atom is introduced into a film formation chamber, the substance is reacted with the impurity containing a hydrogen atom remaining in the film formation chamber, and the substance is changed to a stable substance containing the hydrogen atom. The stable substance containing the hydrogen atom is exhausted without providing a metal atom of an oxide semiconductor layer with the hydrogen atom; therefore, a phenomenon in which a hydrogen atom or the like is taken into the oxide semiconductor layer can be prevented. As the substance that firmly bonds to the impurity containing a hydrogen atom, a substance containing a halogen element is preferable, for example.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and manufacturing method thereof
ActiveUS20110136302A1Improve barrier propertiesPromote absorptionSemiconductor/solid-state device manufacturingSemiconductor devicesOxide semiconductorOxide
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
Owner:SEMICON ENERGY LAB CO LTD
Method for manufacturing semiconductor device
ActiveUS20140106504A1Excellent electrical propertiesImprove reliabilityVacuum evaporation coatingSputtering coatingOxygen vacancyIon implantation
To provide a semiconductor device in which an increase in oxygen vacancies is suppressed. To provide a semiconductor device with favorable electrical characteristics. To provide a highly reliable semiconductor device. In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS8901557B2Improve mobilityHighly reliable semiconductor deviceTransistorSolid-state devicesCharge carrierBottom gate
High field-effect mobility is provided for a transistor including an oxide semiconductor. Further, a highly reliable semiconductor device including the transistor is provided. In a bottom-gate transistor including an oxide semiconductor layer, an oxide semiconductor layer functioning as a current path (channel) of the transistor is sandwiched between oxide semiconductor layers having lower carrier densities than the oxide semiconductor layer. In such a structure, the channel is formed away from the interface of the oxide semiconductor stacked layer with an insulating layer in contact with the oxide semiconductor stacked layer, i.e., a buried channel is formed.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor Device
InactiveUS20070230235A1Reduce the driving voltageImprove reliabilityNanoinformaticsSolid-state devicesOrganic memorySimple Organic Compounds
It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and manufacturing method thereof
ActiveUS20120149147A1Reduce variationTotal current dropElectroluminescent light sourcesSemiconductor/solid-state device manufacturingSemiconductor materialsOxygen
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
Owner:SEMICON ENERGY LAB CO LTD
Heat-resistant resin laminated film, multilayer film with metal layer including same and semiconductor device
InactiveUS20070169886A1Improve reliabilityHighly reliable semiconductor deviceSynthetic resin layered productsPrinted circuit aspectsDevice materialPolyimide membrane
Disclosed are a heat-resistant resin laminate film comprising a heat-resistant insulating film such as a polyimide film and a heat-resistant resin layer laminated thereon, which laminate film is free from warp; and a laminate film with a metal layer, comprising a heat-resistant insulating film and a metal layer laminated thereon through a heat-resistant resin layer, which laminate film with a metal layer is free from warp in the state that a circuit pattern is formed. In the heat-resistant resin laminate film, a heat-resistant resin layer is laminated on at least one surface of the heat-resistant insulating film, wherein the heat-resistant resin layer has a coefficient of linear expansion kA (ppm / ° C.) within the range of k−10≦kA≦k+20 (k: coefficient of linear expansion of the heat-resistant insulating film). The laminate film with a metal layer is one obtained by laminating the metal layer on the heat-resistant resin layer of the heat-resistant resin laminate film.
Owner:TORAY IND INC
Oxide semiconductor film and semiconductor device
ActiveUS20120261657A1Stable electrical characteristicsStable characteristicsGallium/indium/thallium compoundsSolid-state devicesIndiumDevice material
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS9245958B2Low reliabilityFew oxygen vacancyTransistorSolid-state devicesPower semiconductor deviceConduction band
A highly reliable semiconductor device exhibiting stable electrical characteristics is provided. Further, a highly reliable semiconductor device is provided. Oxide semiconductor films are stacked so that the conduction band has a well-shaped structure. A second oxide semiconductor film having a crystalline structure is provided over the first oxide semiconductor film and a third oxide semiconductor film is provided over the second oxide semiconductor film. The bottom of a conduction band in the second oxide semiconductor film is deeper from a vacuum level than the bottom of a conduction band in the first oxide semiconductor film and the bottom of a conduction band in the third oxide semiconductor film.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS20130223135A1Highly reliable dataReduce power consumptionDigital data processing detailsSolid-state devicesElectrical polarityHemt circuits
The memory device includes a first logic element which is supplied with a first power supply voltage, and inverts a polarity of a potential of an input terminal to output the potential with the inverted polarity from an output terminal, a second logic element which is supplied with a second power supply voltage supplied through a different path from the first power supply voltage, and inverts a polarity of a potential of an input terminal to output the potential with the inverted polarity from an output terminal, a first memory circuit connected to the input terminal of the first logic element, and a second memory circuit connected to the input terminal of the second logic element. The input terminal and the output terminal of the first logic element are connected to the output terminal and the input terminal of the second logic element, respectively.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing semiconductor device
InactiveUS20150028330A1Highly-integratedReduce power consumptionTransistorSolid-state devicesPower semiconductor deviceMiniaturization
Provided is a semiconductor device in which a deterioration in electrical characteristics which becomes more noticeable as miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with each side surface of the first oxide semiconductor film and the second oxide semiconductor film; a first insulating film and a second insulating film over the source electrode and the drain electrode; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with an upper surface of the gate insulating film and facing an upper surface and the side surface of the second oxide semiconductor film.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS20140225104A1High currentHighly reliable semiconductor deviceTransistorSemiconductorOxide semiconductor
An object is to provide a semiconductor device that includes an oxide semiconductor and is suitable for a power device. An object is to provide a semiconductor device in which large current can flow. An object is to provide a highly reliable semiconductor device. A semiconductor device includes an oxide stack in which a first oxide layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second oxide layer are stacked and has a structure in which a region that contains an element imparting conductivity and is provided in the first oxide semiconductor layer overlaps an electrode functioning as a source electrode and does not overlap an electrode functioning as a drain electrode.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and manufacturing method thereof
ActiveUS20080315249A1Improve reliabilityPrevent an aluminum spike from generatingSemiconductor/solid-state device manufacturingSemiconductor devicesEngineeringSemiconductor
A semiconductor substrate has a trench in a first main surface. An insulated gate field effect part includes a gate electrode formed in the first main surface. A potential fixing electrode fills the trench and has an expanding part expanding on the first main surface so that a width thereof is larger than the width of the trench. An emitter electrode is formed on the first main surface and insulated from the gate electrode electrically and connected to a whole upper surface of the expanding part of the potential fixing electrode. Thus, a semiconductor device capable of enhancing reliability in order to prevent an aluminum spike from generating and a manufacturing method thereof can be provided.
Owner:MITSUBISHI ELECTRIC CORP
Semiconductor device
ActiveUS20140103338A1Enhance layeringExcellent electrical propertiesSolid-state devicesSemiconductor/solid-state device manufacturingOxygen vacancyNitride
A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for a metal film of a source electrode layer and a drain electrode layer, whereby diffusion of oxygen to the metal film is suppressed.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
InactiveUS20150001533A1Improve reliabilityHighly reliable semiconductor deviceTransistorSolid-state devicesAtomic orderConduction band
To provide a highly reliable semiconductor device including an oxide semiconductor. The device has a stacked-layer structure including an oxide semiconductor layer and an insulating layer in contact therewith. The oxide semiconductor layer includes a first layer where a channel is formed and a second layer which is between the first layer and the insulating layer and whose energy of the bottom of the conduction band is closer to the vacuum level than that of the first layer. The second layer serves as a barrier layer preventing formation of defect states between the channel and the insulating layer. The first layer and the second layer include a minute crystal part in which periodic atomic arrangement is not observed macroscopically or long-range order in atomic arrangement is not observed macroscopically. For example, a region with a size of 1 nm to 10 nm includes a crystal part having periodic atomic order.
Owner:SEMICON ENERGY LAB CO LTD
Method for manufacturing semiconductor device
ActiveUS9153436B2Enhance layeringExcellent electrical propertiesTransistorVacuum evaporation coatingOxygenSemiconductor
In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS9229481B2Improved browsabilityImprove portabilityDischarge tube luminescnet screensDigital data processing detailsDevice materialDisplay device
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS20140103340A1Excellent electrical propertiesImprove reliabilitySolid-state devicesSemiconductor/solid-state device manufacturingPower semiconductor deviceOxygen vacancy
A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for metal films of a source electrode layer, a drain electrode layer, and a gate electrode layer, whereby diffusion of oxygen to the metal films is suppressed.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
InactiveUS20090079024A1Lower Reliability RequirementsArea of semiconductor can be increasedSolid-state devicesSemiconductor/solid-state device manufacturingDevice materialEngineering
To provide a method for manufacturing a large-area semiconductor device, to provide a method for manufacturing a semiconductor device with high efficiency, and to provide a highly-reliable semiconductor device in the case of using a large-area substrate including an impurity element. A plurality of single crystal semiconductor substrates are concurrently processed to manufacture an SOI substrate, so that an area of a semiconductor device can be increased and a semiconductor device can be manufactured with improved efficiency. In specific, a series of processes is performed using a tray with which a plurality of semiconductor substrates can be concurrently processed. Here, the tray is provided with at least one depression for holding single crystal semiconductor substrates. Further, deterioration of characteristics of a manufactured semiconductor element is prevented by providing an insulating layer serving as a barrier layer against an impurity element which may affect characteristics of the semiconductor element.
Owner:SEMICON ENERGY LAB CO LTD
Method for using sputtering target and method for manufacturing oxide film
InactiveUS20140001032A1Stable electrical characteristicsHigh crystallinityElectroluminescent light sourcesVacuum evaporation coatingIonCrystallite
A method for using a sputtering target which enables an oxide film with a high degree of crystallinity, which contains a plurality of metal elements, to be formed is provided. In the method for using a sputtering target including a polycrystalline oxide containing a plurality of crystal grains which include a cleavage plane, an ion is made to collide with the sputtering target to separate sputtered particles from the cleavage plane, and the sputtered particles are positively charged, so that the sputtered particles are deposited uniformly on a deposition surface while repelling each other.
Owner:SEMICON ENERGY LAB CO LTD
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com