58results about How to "Effective stress increase" patented technology

A manufacturing method for a semiconductor structure includes providing a substrate having at least a gate structure formed thereon, performing a first wet etching process to etch the substrate at two sides of the gate structure, performing a second wet etching process to etch the substrate to form a recess respectively at two sides of the gate structure, and performing a selective epitaxial growth method to form an epitaxial layer having a diamond shape with a flat bottom respectively in the recess.

The invention discloses a system and a method for drainage consolidation for a soft soil foundation. The system comprises plastic drainage plates, siphons, plate shoes, a heaped load, a water collection well and a water suction pump, wherein side ditches are excavated in the soft soil foundation and to be below an underground water level; the plastic drainage plates are inserted in the side ditches and arranged in a quincunx shape; one plate shoe made from the same material as each plastic drainage plate is installed at one end inserted in the soft soil foundation, of the plastic drainage plate; a water inlet port of one siphon is inserted in each plastic drainage plate, and a water outlet port of the siphon stretches into the water collection well located in the vicinity of the soft soil foundation; the side ditches are filled with soil; and the heaped load is placed on the surface of the soft soil foundation. The water suction pump is started to suck water, so that a water level in the water collection well is lowered, and the drainage consolidation for the soft soil foundation is promoted.

The invention relates to a test method for simulating the shear resistant strength change of foundation pit precipitation soil. The test method comprises the following steps of: firstly, preparing an original-shape soil sample by using a fret saw, a soil cutter, a soil cutting disk, and the like; secondly, carrying out exhausting and water injection on the sample in a vacuum tank to be saturated;thirdly, mounting a test sample in which a latex film is sleeved in a three-axle pressure chamber; fourthly, solidifying the test sample at two phases through a three-axle ambient pressure system, wherein the test sample is restored to be in a natural self-weight stress state of a soil body by using the first-time solidification and the stress state of the soil body subjected to precipitation is simulated by using secondary solidification; fifthly, carrying out an un-drained shear test on the test sample through an axial loading system; and sixthly, after the test is ended, closing a motor and a valve and detaching the test sample. According to the test method disclosed by the invention, the influence of the reduction for water content of the foundation pit precipitation soil, the increase of effective stress and soil solidification and compaction on the soil shear resistant stretch is considered so as to provide reference for accurately selecting shear resistant strength indexes of the foundation pit precipitation soil and further provide guarantee for designing and constructing deep foundation pits of soft soil water-rich stratum safely, economically and reasonably.

The present invention provides a method for forming a semiconductor structure, comprising: firstly, a substrate is provided, next, a first dry etching process is performed, to form a recess in the substrate. Afterwards, an ion implantation process is performed to a bottom surface of the recess, a wet etching process is then performed, to etch partial sidewalls of the recess, so as to form at least two tips on two sides of the recess respectively, and a second dry etching process is performed, to etch partial bottom surface of the recess, wherein after the second dry etching process is performed, a lower portion of the recess has a U-shaped cross section profile.