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31results about How to "Decrease is limited" patented technology

Plasma processing apparatus

A plasma processing apparatus capable of, over a prolonged period of time, controlling a decrease in the value of a DC current flowing within an accommodating compartment. The plasma processing apparatus comprises an accommodating compartment adapted to accommodate a substrate and perform a plasma treatment thereon, a high-frequency power source adapted to supply high-frequency power to the inside of the accommodating compartment; a DC electrode adapted to apply a DC voltage to the inside of the accommodating compartment, a ground electrode provided within the accommodating compartment and used for the applied DC voltage, and an exhaust unit adapted to evacuate the inside of the accommodating compartment. The plasma processing apparatus further comprises a shielding member disposed in the accommodating compartment so as to extend along the flow of exhaust gas, interpose between the flow of exhaust gas and the ground electrode, and form a cross-sectionally elongated groove-shaped space between the shielding member and the ground electrode.
Owner:TOKYO ELECTRON LTD

Adaptive power source control system

A method of controlling a power source associated with a machine includes determining a difference between an underspeed setpoint associated with a peak power source torque and a first power source speed. The method also includes determining a torque distribution associated with the power source and at least one parasitic load receiving power from the power source. The torque distribution is based on the difference and respective torque priority values associated with the power source and the at least one parasitic load. The method further includes providing torque from the power source to the at least one parasitic load based on the torque distribution and modifying at least one of the respective torque priority values. Modifying at least one of the torque priority values reduces a difference between the underspeed set point and a second power source speed different than the first power source speed.
Owner:CATERPILLAR INC

Compound semiconductor device and method for manufacturing the same

A method for manufacturing a compound semiconductor device includes: providing a semiconductor substrate including a foundation layer having a first conductivity type; forming a deep trench in the foundation layer; and forming a deep layer having a second conductivity type by introducing material gas of the compound semiconductor while introducing dopant gas into an epitaxial growth equipment to cause epitaxial growth of the deep layer in the deep trench. A period in which a temperature in the epitaxial growth equipment is increased to a temperature of the epitaxial growth of the deep layer is defined as a temperature increasing period. In the forming the deep layer, the deep layer is further formed in a bottom corner portion of the deep trench by starting the introducing of the dopant gas during the temperature increasing period and starting the introducing of the material gas after the temperature increasing period.
Owner:DENSO CORP

Method for controlling polyphase rotating electrical machine

A method for controlling a reversible polyphase rotating electrical machine, wherein at least one coil circuit is supplied through a bridge of switches, including the following steps: controlling (P1) the bridge to deliver to the coil circuit a periodic voltage with a phase shift (d) relative to an electromotive force induced in the coil circuit, such that an operating torque is generated, the phase shift having initially a first value (d0); controlling (P2) the bridge to deliver to the coil circuit a periodic voltage with the phase shift (d) producing a torque ranging between the operating torque and the opposite of the operating torque, the phase shift taking on a plurality of values upon the control; flipping (T2) the bridge in rectifying mode.
Owner:VALEO EQUIP ELECTRIC MOTEUR
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