A
semiconductor light-emitting device, and a method of manufacturing the same. The
semiconductor light-emitting device includes a first
electrode layer, an insulating layer, a second
electrode layer, a second
semiconductor layer, an
active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first
electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a
contact hole that passes through the second electrode layer, the second semiconductor layer, and the
active layer, and the insulating layer surrounds an inner circumferential surface of the
contact hole to insulate the first electrode layer from the second electrode layer.