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45 results about "Wien filter" patented technology

A Wien filter also known as velocity selector is a device consisting of perpendicular electric and magnetic fields that can be used as a velocity filter for charged particles, for example in electron microscopes and spectrometers. It is used in accelerator mass spectrometry to select particles based on their speed. The device is composed of orthogonal electric and magnetic fields, such that particles with the correct speed will be unaffected while other particles will be deflected. It is named for Wilhelm Wien who developed it in 1898 for the study of anode rays. It can be configured as a charged particle energy analyzer, monochromator, or mass spectrometer.

Wien filter with reduced chromatic aberration

ActiveUS7164139B1Reduce or eliminate the chromatic aberration caused by the deviceMaterial analysis by optical meansIsotope separationMagnetic tension forceWien filter
One embodiment disclosed relates to a Wien filter for a charged-particle beam apparatus. The charged-particle beam is transmitted through the Wien filter in a first direction. A magnetic field generation mechanism is configured to generate a magnetic field in a second direction which is perpendicular to the first direction, and an electrostatic field generation mechanism is configured to generate an electrostatic field in a third direction which is perpendicular to the first and second directions. The field generation mechanisms are further configured so as to have an offset between the positions of the magnetic and electrostatic fields along the first direction. Another embodiment disclosed relates to a Wien filter type device wherein the magnetic force is approximately twice in strength compared to the electrostatic force. Other embodiments are also disclosed.
Owner:KLA TENCOR TECH CORP

Secondary particle detection system of scanning electron microscope

A scanning electron microscope includes: a retarding power source configured to apply a retarding voltage to a specimen; a combined objective lens configured to focus the primary beam on a surface of the specimen; an electrostatic deflection system configured to deflect the primary beam to direct the primary beam to each point in a field of view on the surface of the specimen; a first scintillation detector having a first scintillator configured to emit light upon incidence of secondary electrons which have been emitted from the specimen; a Wien filter configured to deflect the secondary electrons in one direction without deflecting the primary beam; and a second scintillation detector having a second scintillator configured to detect the secondary electrons deflected by the Wien filter. The second scintillator has a distal end located away from the axis of the primary beam.
Owner:TASMIT INC

Charged particle beam apparatus

This invention provides a charged particle beam apparatus that can makes reduction in off axis aberration and separate detection of secondary beams to be compatible. The charged particle beam apparatus has: an electron optics that forms a plurality of primary charged particle beams, projects them on a specimen, and makes them scan the specimen with a first deflector; a plurality of detectors that individually detect a plurality of secondary charged particle beams produced from the plurality of locations of the specimen by irradiation of the plurality of primary charged particle beams; and a voltage source for applying a voltage to the specimen. The charged particle beam apparatus further has: a Wien filter for separating paths of the primary charged particle beams and paths of the secondary charged particle beams; a second deflector for deflecting the secondary charged particle beams separated by the Wien filter; and control means for controlling the first deflector and the second deflector in synchronization, wherein the plurality of detectors detect the plurality of secondary charged particle beams separated by the Wien filter individually.
Owner:HITACHI HIGH-TECH CORP

Electron beam apparatus and an aberration correction optical apparatus

An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a 1 / 4 plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.
Owner:EBARA CORP

Electron beam apparatus and an aberration correction optical apparatus

An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a ¼ plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.
Owner:EBARA CORP
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