Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

161 results about "Photo conversion" patented technology

Fused multi-array color image sensor

The invention, in various exemplary embodiments, incorporates multiple image sensor arrays, with separate respective color filters, on the same imager die. One exemplary embodiment is an image sensor comprising a plurality of arrays of pixel cells at a surface of a substrate, wherein each pixel cell comprises a photo-conversion device. The arrays are configured to commonly capture an image. An image processor circuit is connected to said plurality of arrays and configured to combine the captured images, captured by the plurality of arrays, and output a color image.
Owner:APTINA IMAGING CORP

Anti-blooming storage pixel

Embodiments of the present invention provide pixel cells with increased storage capacity, which are capable of anti-blooming operations. In an exemplary embodiment a pixel cell has an electronic shutter that transfers charge generated by a photo-conversion device to a storage node before further transferring the charge to the pixel cell's floating diffusion node. Each pixel cell also includes an anti-blooming transistor for directing excess charge out of each respective pixel cell, thus preventing blooming. Additionally, two or more pixel cells of an array may share a floating diffusion node and reset and readout circuitry.
Owner:APTINA IMAGING CORP

Transparent-channel thin-film transistor-based pixels for high-performance image sensors

A pixel circuit, and method of forming a pixel circuit, an imager device, and a processing system include a photo-conversion device, a floating diffusion region for receiving and storing charge from the photo-conversion device, and a transparent transistor for use in operation of the pixel, wherein the transparent transistor is at least partially over the photo-conversion device, such that the photo-conversion device receives light passing through the transparent transistor.
Owner:APTINA IMAGING CORP

Image sensor having improved sensitivity and method for making same

An image sensor having improved sensitivity and method for making same include a substrate having an active pixel region with a peripheral circuit region surrounding the active pixel region; a plurality of photo conversion elements disposed in the active pixel region, each photodiode is configured for receiving light through a lens and an opening formed between a plurality of layers of interlayer dielectrics formed on top of each other above the substrate; and a plurality of interconnections electrically connecting to the photo conversion elements disposed within the active pixel region, wherein the distance between the lens and the photo conversion elements is shorter than the distance between the substrate and the top interlayer dielectric in the peripheral circuit region.
Owner:SAMSUNG ELECTRONICS CO LTD

High power laser photo-conversion assemblies, apparatuses and methods of use

ActiveUS20120266803A1Without substantial loss of powerRadiation pyrometryHollow article cleaningFiberHigh power lasers
There is provided a high power laser system for powering a remotely located laser device, such as an ROV, using a high power laser fiber optic tether and a photo-conversion device, such as a laser photovoltaic assembly. Laser device systems, such as ROV systems that utilizes a high power laser cutting and / or cleaning tools are also provided.
Owner:FORO ENERGY

Transparent-channel thin-film transistor-based pixels for high-performance image sensors

A pixel circuit, and method of forming a pixel circuit, an imager device, and a processing system include a photo-conversion device, a floating diffusion region for receiving and storing charge from the photo-conversion device, and a transparent transistor for use in operation of the pixel, wherein the transparent transistor is at least partially over the photo-conversion device, such that the photo-conversion device receives light passing through the transparent transistor.
Owner:APTINA IMAGING CORP

Anti-blooming storage pixel

Embodiments of the present invention provide pixel cells with increased storage capacity, which are capable of anti-blooming operations. In an exemplary embodiment a pixel cell has an electronic shutter that transfers charge generated by a photo-conversion device to a storage node before further transferring the charge to the pixel cell's floating diffusion node. Each pixel cell also includes an anti-blooming transistor for directing excess charge out of each respective pixel cell, thus preventing blooming. Additionally, two or more pixel cells of an array may share a floating diffusion node and reset and readout circuitry.
Owner:APTINA IMAGING CORP

Imaging with gate controlled charge storage

A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.
Owner:APTINA IMAGING CORP

Anti-resonant reflecting optical waveguide for imager light pipe

An anti-resonant reflecting optical waveguide structure for reducing optical crosstalk in an image sensor and method of forming the same. The method includes forming a trench within a plurality of material layers and over a photo-conversion device. The trench is vertically aligned with the photo-conversion device and is filled with materials of varying refractive indices to form an anti-resonant reflecting optical waveguide structure. The anti-resonant reflecting optical waveguide structure has a core and at least two cladding structures. The cladding structure in contact with the core has a refractive index that is higher than the refractive index of the core and the refractive index of the other cladding structure. The cladding structures act as Fabry-Perot cavities for light propagating in the transverse direction, such that light entering the anti-resonant reflecting optical waveguide structure remains confined to the core. This reduces the chance of photons impinging upon neighboring photo-conversion devices.
Owner:APTINA IMAGING CORP

Conjugated narrow-band tri-phosphor staggered volume holographic grating waveguide near-to-eye optical display device

The invention provides a conjugated narrow-band tri-phosphor staggered volume holographic grating waveguide near-to-eye optical display device. The device comprises an image display light source which is used for providing image information to be viewed, a P&S photo-conversion component which is used for converting P light and S light, a collimating lens group which is used for collimating light wave, a PBS component which is used for the polarizing beam-splitting of light wave, a beam-splitting selecting component which is used for uniformly spreading the light wave on a coupling input surface; a conjugated tri-phosphor staggered coupling input volume holographic grating which is used for dispersing incident ray and totally reflecting and transmitting the ray inside the substrate, a light-guide transmitting substrate which is used for totally reflecting and transmitting the light wave, and a conjugated tri-phosphor staggered coupling output volume holographic grating which is used for coupling the dispersed incident ray in sequence and outputting the ray to the outside of the substrate. The device has the advantages of full color, ultra-thinness, large field angle and simplicity in process and implementation, and can be applied to the damage-free display of a mobile screen, the display of a terminal, the scene teaching instruction for a doctor, the real-time information positioning for fire fighting, 3D game and other fields.
Owner:SHANGHAI RAYPAI PHOTONIC CRYSTAL LTD

Capacitor over red pixel

A red pixel having a capacitor formed over the photo-conversion region of the pixel. The capacitor can be used by other pixels as a common capacitor. The capacitor is coupled to floating diffusion region shared by a plurality of pixels. The plurality of pixels also share readout circuitry.
Owner:APTINA IMAGING CORP

Method and apparatus for converting a photo to a caricature image

A method for creating a caricature image from a digital image is provided. The method initiates with capturing digital image data. The method includes locating a facial region within the captured image data. Then, a facial feature template matching a facial feature of the facial region is selected. Next, the facial feature template is substituted for the facial feature. Then, the facial feature template is transformed into a caricature or non-realistic image. A computer readable medium, an image capture device capable of creating a caricature from a captured image and an integrated circuit are also provided.
Owner:SEIKO EPSON CORP

Method and server for achieving insurance claim anti-fraud based on consistency of multiple pictures

ActiveCN105719188APrevent insurance fraud by exaggerating the degree of lossImage enhancementImage analysisCrucial pointFeature parameter
The invention discloses a method for achieving insurance claim anti-fraud based on consistency of multiple pictures.The method comprises the steps of dividing damage assessment pictures of the same position of a vehicle into the same set; obtaining key point features of all sets, grouping the assessment pictures of all the picture sets, and matching multiple related key points with the assessment pictures in each group; according to the related key points of each group, calculating a feature point transformation matrix of each group, and converting one of pictures in each group into a to-be-verified picture having the same shooting angle as another picture in the group through the corresponding feature point transformation matrix; conducting feature parameter matching on each to-be-verified picture and another picture in the corresponding group; when feature parameters are not matched, generating reminding information so as to remind that fraud practice exists in the received picture.The invention further provides a server applicable to the method.By means of the method and server for achieving insurance claim anti-fraud based on consistency of the multiple pictures, fraud insurance claim practice can be identified automatically.
Owner:PING AN TECH (SHENZHEN) CO LTD

Diopter-adjustable curved surface waveguide near-to-eye optical display device

The invention provides a diopter-adjustable curved surface waveguide near-to-eye optical display device which comprises an image display light source used for providing image information used for observation, a collimating lens set used for collimating optical waves, a PBS (polarization beam-splitting) assembly used for performing polarization beam-splitting on the optical waves, a P&S photo-conversion assembly used for realizing conversion of P light and S light, a P&S beam-splitting selection assembly capable of enabling the optical waves to uniformly cover a coupling input surface, a micro-curved surface waveguide substrate used for performing total-reflection propagation on the optical waves, and a micro-local curvature coupling output surface used for enabling the transmitted optical waves to be coupled and output out of the substrate, expanding a view field angle and adjusting the diopter. The diopter-adjustable curved surface waveguide near-to-eye optical display device has the advantages of adjustable diopter, lightweight, thinness, large view field angle, simplicity for processing and design, easiness for realization, compact structure and high energy utilization rate of an image source, can be used in various fields of remote medical information teaching, virtual reality simulation training, fire rescue information positioning guidance, road enhancement display and the like, and can be used as a display of a terminal.
Owner:SHANGHAI RAYPAI PHOTONIC CRYSTAL LTD

Deuterated structures for image sensors and methods for forming the same

A pixel cell with a photo-conversion device and at least one structure includes a deuterated material adjacent the photo-conversion device.
Owner:MICRON TECH INC

Wide dynamic range pinned photodiode active pixel sensor (APS)

An image apparatus and method is disclosed for extending the dynamic range of an image sensor. A first linear pixel circuit produces a first pixel output signal based on charge integration by a first photo-conversion device over a first integration period. A second linear pixel circuit produces a second pixel output signal based on charge integration by a second photo-conversion device over a second integration period, where the second integration period is shorter than the first integration period. A sample-and-hold circuit captures signals representing the first and second pixel output signals.
Owner:APTINA IMAGING CORP

Method and apparatus providing and optical guide in image sensor devices

ActiveUS7511257B2Mitigates against optical crosstalkImprove difference in index of refractionSolid-state devicesMaterial analysis by optical meansFilling materialsRefractive index
A device and method for providing an optical guide of a pixel to guide incoming light to / from a photo-conversion device of the pixel to improve the optical crosstalk immunity. The optical guide includes an optically reflecting barrier formed as a trench filled with a material which produces reflection. The trench fill material may have an index of refraction that is less than the index of refraction of the material used for the trench surrounding layers to provide a light reflective structure or the trench fill material may provide a reflection surface.
Owner:APTINA IMAGING CORP

CMOS imaging for ALC and CDS

Embodiments of the invention provide pixel cells that allow both automatic light control and correlated double sampling operations. The pixel cell includes first and second photo-conversion devices that can be separately read out. For example, the second photo-conversion device can be the pixel cells' floating diffusion region, with an area and doping profile suitable for photo-conversion. An image sensor may include an array of pixel cells, some or all of which have two photo-conversion devices, and peripheral circuitry for reading out signals from the pixel cells. The image sensor's readout circuitry may monitor charge generated by the second photo-conversion devices to determine when to read out signals from the first photo-conversion devices.
Owner:APTINA IMAGING CORP

Imager with reflector mirrors

Embodiments of the invention provide an imager pixel comprising a reflective layer formed over a substrate. There is a semiconductor layer over the reflective layer. A photo-conversion device is formed at a surface of the semiconductor layer. The reflective layer serves to reflect incident light not initially absorbed into the photo-conversion device, back to the photo-conversion device.
Owner:HONG SUNGKWON C

Fused multi-array color image sensor

The invention, in various exemplary embodiments, incorporates multiple image sensor arrays, with separate respective color filters, on the same imager die. One exemplary embodiment is an image sensor comprising a plurality of arrays of pixel cells at a surface of a substrate, wherein each pixel cell comprises a photo-conversion device. The arrays are configured to commonly capture an image. An image processor circuit is connected to said plurality of arrays and configured to combine the captured images, captured by the plurality of arrays, and output a color image.
Owner:APTINA IMAGING CORP

Wide forbidden region semi-conductor nano tube/linear array film, preparation and photoelectric pole thereof

The invention relates to a wide band gap semiconductor nanotube / line array film characterized by high conversion efficiency and quantum dot sensitization, and a preparation method thereof as well as a photo-electrode adopting the wide band gap semiconductor nanotube / line array film. The wide band gap semiconductor nanotube / line array film provided by the invention comprises a wide band gap semiconductor nanotube / line array and a conductive substrate, and the wide band gap semiconductor nanotube / line array is filled with narrow band gap semiconductor quantum dot nano-particles. According to the preparation method provided by the invention, the anodic oxidation method is used for preparing the wide band gap semiconductor nanotube / line array film, and the chemical deposition method is used for preparing a narrow band semiconductor nanotube / line array film with sensitized quantum dots. The photo-electrode adopting the wide band gap semiconductor nanotube / line array film can be applied to a photo-chemical bath, and the photo conversion efficiency of the photo-chemical bath can be substantially improved. The invention can be widely applied to the technical field of photo-electricity conversion of solar power.
Owner:PEKING UNIV

Isolation trench geometry for image sensors

A pixel cell including a substrate having a top surface. A photo-conversion device is at a surface of the substrate and a trench is in the substrate adjacent the photo-conversion device. The trench has sidewalls and a bottom. At least one sidewall is angled less than approximately 85 degrees from the plane of the top surface of the substrate.
Owner:APTINA IMAGING CORP

Manufacturing method of full-color Micro-LED display device based on quantum dot photo-conversion layer

The invention discloses a manufacturing method of a full-color Micro-LED display device based on a quantum dot photo-conversion layer, and relates to the technical field of preparation of displays. The following problems are solved: existing quantum dot materials are directly coated with the surface of Micro-LED, and after a coating process is completely carried out, the quantum dot materials arranged above adjacent pixel units can be horizontally diffused in a low-temperature heat annealing process, and serious optical crosstalk interference can be caused by mixing the different quantum dot materials. Light source arrays are tightly adhered with quantum dot film layers so that difficult separation between the light source arrays and the quantum dot film layers is achieved; a photo-conversion layer base plate is prepared by coating quantum dot material subareas of different colors with different positions of glass or polymer base plates; a monochromatic Micro-LED display array is adhered with the photo-conversion base plate, so that full-color display of the Micro-LED is realized. A DBR reflective mirror is prepared at the bottom of a groove so as to inhibit emission of the monochromatic Micro-LED display array, so that a light source utilization ratio is increased. The full-color Micro-LED display device prepared by adopting the method has the advantages of less optical crosstalk interference of the adjacent pixels, high utilization ratio of excitation light sources and high display quality.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Backside-illuminated solid-state image pickup device

Provided is a backside-illuminated solid-state image pickup device capable of allowing peripheral circuits to produce stable waveforms and thereby achieving image characteristics with less noise, the device including: a first-conductivity-type semiconductor layer having a first principal surface and a second principal surface opposed to the first principal surface and also having a pixel area and an analog circuit area; a first P type area formed to lie between the second principal surface and the first principal surface in the analog circuit area; a metal layer formed at least partially on the second principal surface of the first P type area; a VSS electrode electrically connected to the metal layer; a photo-conversion area formed in the pixel area and used to accumulate electric charges generated by photoelectric conversion; and a microlens provided on the second principal surface in the pixel area so as to correspond to the photo-conversion area.
Owner:KK TOSHIBA

Vertical gate device for an image sensor and method of forming the same

A CMOS pixel cell having a charge transfer transistor adjacent the photo-conversion device. The transistor has a channel region surrounded by a gate and an upper source / drain region over the channel region.
Owner:APTINA IMAGING CORP

Method and apparatus providing an optical guide in image sensor devices

A device and method for providing an optical guide of a pixel to guide incoming light to / from a photo-conversion device of the pixel to improve the optical crosstalk immunity. The optical guide includes an optically reflecting barrier formed as a trench filled with a material which produces reflection. The trench fill material may have an index of refraction that is less than the index of refraction of the material used for the trench surrounding layers to provide a light reflective structure or the trench fill material may provide a reflection surface.
Owner:APTINA IMAGING CORP

Linear array detector system and inspection method

A linear array detector (LAD) for scanning an object is provided. The detector includes a scintillator layer configured for generating a number of optical signals representative of a fraction of an incident X-ray beam passing through the object. The plane of the scintillator is parallel to the X-ray beam. The LAD further includes a two dimensional array of photo-conversion elements configured to receive several X-rays of the X-ray beams and configured to generate corresponding electrical signals. An arrangement of the photo-conversion elements is independent of the X-ray paths.
Owner:GENERAL ELECTRIC CO

Imager with gradient doped EPI layer

A pixel cell including a substrate of a first conductivity type over an epitaxial layer of a second conductivity type. The epitaxial layer has a dopant gradient, wherein the dopant concentration decreases from a surface of the epitaxial layer adjacent the substrate to the surface of the epitaxial layer opposite the substrate. A photo-conversion device is at a surface of the epitaxial layer.
Owner:APTINA IMAGING CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products