Wide forbidden region semi-conductor nano tube/linear array film, preparation and photoelectric pole thereof
A wide-bandgap semiconductor and nanotube technology is applied in the field of solar photoelectric conversion to achieve the effect of improving conversion efficiency
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[0031] The invention provides a preparation method and structure of a high-conversion-efficiency quantum dot-sensitized wide-bandgap semiconductor nanotube / line array film solar photoelectrode. The present invention prepares wide-bandgap semiconductor nanotube / line array film by anodic oxidation method (such as in fluorine-containing electrolyte); uses chemical deposition method to prepare wide-gap semiconductor nanotube / line array sensitized by narrow-bandgap semiconductor quantum dots membrane. The photoelectrode using this wide bandgap semiconductor nanotube / line array film is applied in a photoelectrochemical cell, and the photoelectric conversion efficiency is greatly improved, indicating that the narrow bandgap quantum dot and wide bandgap semiconductor nanotube / line array The composite structure can greatly improve the conversion efficiency of photovoltaic cells.
[0032] Next, TiO was sensitized with CdS quantum dots 2 The nanotube (also applicable to nanowire) array...
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