78 results about "Bit pairing" patented technology

Methods of programming a wordline of multi-level flash memory cells (MLB) having three or more data levels per bit corresponding to three or more threshold voltages are provided. The present invention employs an interactive program algorithm that programs the bits of the wordline of memory cells in two programming phases, comprising a rough programming phase and a fine programming phase to achieve highly compact Vt distributions. In one example, cell bit-pairs that are to be programmed to the same program pattern are selected along a wordline. Groups of sample bits are chosen for each wordline to represent each possible program level. The sample bits are then programmed to determine a corresponding drain voltage at which each sample group is first programmed. This fast-bit drain voltage (Fvd) for each program level essentially provides a wordline specific program characterization of the Vt required for the remaining bits of that wordline. In the rough programming phase, the bits of core cells are then programmed from a starting point that is relative to (e.g., slightly less than or equal to) the fast-bit Vd and according to a predetermined Vd and Vg profile of programming pulses. The bits of the complementary bit-pairs are alternately programmed in this way until the Vt of the bits attains a rough Vt level, which is offset lower than the final target threshold voltage level. Then in the second fine programming phase, the bits of the MLB cells of the wordline are further programmed with another predetermined Vd and Vg profile of programming pulses until the final target threshold voltage is achieved. The Vd and Vg profiles of programming pulses may further be tailored to accommodate the various bit-pair program pattern combinations possible. In this way, the bits of each wordline are fine-tune programmed to a data state to achieve a more precise Vt distribution, while compensating for the effects of complementary bit disturb.

A nonvolatile memory including a memory cell that stores data in a plurality of pages included in a block according to a voltage applied to a memory cell is provided. The nonvolatile memory includes a block that includes a first page including first data that stores data recorded by a user, and a second page including second data area that stores data recorded by a user, wherein the second page records count-information on states represented by a bit pair in the same position of the first data area and the second data area.

A content addressable memory (CAM) device, method, and method of generating entries for range matching are disclosed. A CAM device (800) according to one embodiment can include a pre-encoder (806) that encodes range bit values W into additional bits E. Additional bits E can indicate compression of range rules according to particular bit pairs. A CAM array (802) can include entries that store compressed range code values (RANGE) with corresponding additional bit values (ENC). Alternate embodiments can include pre-encoders that encode portions of range values (K1 to Ki) in a “one-hot” fashion. Corresponding CAM entries can include encoded value having sections that each represent increasingly finer divisions of a range space.

In computing point multiples in elliptic curve schemes (e.g. kP and sQ) separately using, for example, Montgomery's method for the purpose of combining kP+sQ several operations are repeated in computing kP and sQ individually, that could be executed at the same time. A simultaneous scalar multiplication method is provided that reduces the overall number of doubling and addition operations thereby providing an efficient method for multiple scalar multiplication. The elements in the pairs for P and Q method are combined into a single pair, and the bits in k and s are evaluated at each step as bit pairs. When the bits in k and s are equal, only one doubling operation and one addition operation are needed to compute the current pair, and when the bits in k and s are not equal, only one doubling operation is needed and two addition operations.

A multi-level dynamic memory device includes a bit line pair that is divided into a main bit line pair and a sub-bit line pair, first and second sense amplifiers that are connected between the main bit line pair and between the sub-bit line pair, first and second coupling capacitors that are cross-coupled between the main bit pair and the sub-bit pair, respectively; and first and second correction capacitors that are connected in parallel to the first and second coupling capacitors, respectively, and whose capacitance is adjusted by a control voltage signal.