The invention discloses a field-emission high-accuracy double-gate structure for reducing electron interception and an installation method thereof. The double-gate structure comprises a negative electrode substrate, a ceramic bottom plate, a negative electrode, a first gate net metal sheet, a second gate net metal sheet, a positive electrode plate, first ceramic posts, second ceramic posts and third ceramic posts, wherein the positive electrode plate is arranged on the ceramic bottom plate and is connected with the ceramic bottom plate via the two first ceramic posts, the first gate net metalsheet is arranged between the positive electrode plate and the ceramic bottom plate and is connected with the ceramic bottom plate via the two second ceramic posts, the second gate net metal sheet isarranged between the positive electrode plate and the first gate net metal sheet and is connected with the ceramic bottom plate via the two third ceramic posts, the first gate net metal sheet and thesecond gate net metal sheet are arranged in a cross way, positioning rods are arranged among the positioning holes, the negative electrode substrate is arranged at a central part of a bottom surface of the ceramic bottom plate, and the negative electrode penetrates through the ceramic bottom plate and is connected with the negative electrode substrate. By the double-gate structure, the problem ofdifficulty in alignment between a pattern negative electrode and a gate net hole can be solved, the alignment of a gate net can be substantially improved, and the transmittance of the gate net is improved.