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Field emission high-precision double-gate structure for reducing electron interception and its installation method

A double grid structure, field emission technology, applied in the field emission field, can solve the problems of low grid transmittance, difficulty in achieving high-precision alignment, limited increase in physical transmittance, etc., so as to improve alignment problem and simple structure. , the effect of improving the transmittance

Active Publication Date: 2019-12-10
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The former grid wire cannot be too thin due to the influence of mechanical strength, so that the growth of physical transmittance is very limited, and the transmittance of the grid is much smaller than the physical transmittance.
The latter, in the process of patterning the cathode, on the one hand, the patterning of the cathode is not easy to achieve with high precision; high rate

Method used

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  • Field emission high-precision double-gate structure for reducing electron interception and its installation method
  • Field emission high-precision double-gate structure for reducing electron interception and its installation method
  • Field emission high-precision double-gate structure for reducing electron interception and its installation method

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Embodiment

[0024] Such as Figure 1-5 As shown, a field emission high-precision double-grid structure for reducing electron interception, including a cathode substrate 1, a ceramic base plate 3, a cathode 4, a first grid metal sheet 5, a second grid metal sheet 6, and an anode plate 2 , the first ceramic column 7, the second ceramic column 8 and the third ceramic column 9; the anode plate 2 is arranged above the ceramic base plate 3, and the anode plate 2 and the ceramic base plate 3 are connected by two first ceramic columns 7, The second grid metal sheet 6 has the same structure as the first grid metal sheet 5, and the central part is provided with a grid 17, and four of the grid 17 are provided with four mutually symmetrical and identical positioning holes 16; The mesh metal sheet 5 is arranged between the anode plate 2 and the ceramic bottom plate 3, and the first grid metal sheet 5 and the ceramic bottom plate 3 are connected by two second ceramic columns 8; the second grid metal sh...

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Abstract

The invention discloses a field-emission high-accuracy double-gate structure for reducing electron interception and an installation method thereof. The double-gate structure comprises a negative electrode substrate, a ceramic bottom plate, a negative electrode, a first gate net metal sheet, a second gate net metal sheet, a positive electrode plate, first ceramic posts, second ceramic posts and third ceramic posts, wherein the positive electrode plate is arranged on the ceramic bottom plate and is connected with the ceramic bottom plate via the two first ceramic posts, the first gate net metalsheet is arranged between the positive electrode plate and the ceramic bottom plate and is connected with the ceramic bottom plate via the two second ceramic posts, the second gate net metal sheet isarranged between the positive electrode plate and the first gate net metal sheet and is connected with the ceramic bottom plate via the two third ceramic posts, the first gate net metal sheet and thesecond gate net metal sheet are arranged in a cross way, positioning rods are arranged among the positioning holes, the negative electrode substrate is arranged at a central part of a bottom surface of the ceramic bottom plate, and the negative electrode penetrates through the ceramic bottom plate and is connected with the negative electrode substrate. By the double-gate structure, the problem ofdifficulty in alignment between a pattern negative electrode and a gate net hole can be solved, the alignment of a gate net can be substantially improved, and the transmittance of the gate net is improved.

Description

technical field [0001] The invention relates to a field emission high-precision double-gate structure for reducing electron interception and an installation method thereof, belonging to the field emission technology field. Background technique [0002] Under normal conditions, the tertiary structure of field emission is composed of cathode, grid and anode. Relying on the high voltage of the grid to pull out the electrons from the cathode, while part of the emitted electrons are intercepted by the grid, and part of them hit the anode. The current intercepted by the grid will cause the temperature of the grid to rise. On the one hand, the grid is heated and deflates, making the vacuum condition worse, easy to ignite, and the cathode is damaged. On the other hand, the grid is heated and deformed, which will change the relationship between the grid and the cathode. If the distance between them is serious, it will lead to a short circuit; in some places where the power is very t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J29/02H01J29/04
CPCH01J29/025H01J29/04
Inventor 肖梅张晓兵
Owner SOUTHEAST UNIV
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