100results about "Recording by electric charge/resistance/capacitance" patented technology

A data read/write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a “d” orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.

A magnetic recording apparatus comprises a magnetic field impression unit, a current supplying unit and a controlling unit t. The magnetic field impression unit impresses a magnetic field to a magnetic recording medium. The current supplying unit supplies a current to the magnetic recording medium. The controlling unit makes the current supplying unit supply the current to the magnetic recording medium while making the magnetic field impression unit impress the magnetic field to at least a unit of a magnetic recording unit of the magnetic recording medium. Thus, a information is recorded magnetically by making a direction of a magnetization of the magnetic recording unit of the magnetic recording medium in a predetermined direction.

A probe storage system, including programmable cells suitable for storing information, and methods of forming and programming the cells are disclosed. The programmable cells generally include an ion conductor, a plurality of electrodes, and a protective layer between the ion conductor and at least one of the electrodes, wherein one of the electrodes may be in the form of a probe. Electrical properties of the cells may be altered by applying energy to the structure, and thus information may be stored using the system.

A recording/reproducing head for performing at least one of a record operation of recording information onto a dielectric recording medium and a reproduction operation of reproducing the information from the dielectric recording medium, the recording/reproducing head provided with: a support member which extends in a longitudinal direction of the recording/reproducing head; and a projection portion which is mounted on the support member such that a tip of the projection portion faces the dielectric recording medium, the projection portion having a ridge-line on the tip, the projection portion being capable of contacting the dielectric recording medium at one point on the ridge-line.

The record condition extraction system (1) of a dielectric recording medium is intended to obtain an applied voltage and an applied time length to be recorded when recording information in the dielectric recording medium. The record condition extraction system (1) is provided with: an applied voltage setting device (11); an applied time length setting device (12); a record control device (13); an applied voltage/applied time length record device (14); a record device (15); a dot radius measurement device (16); a dot radius record device (17); an optimum dot radius detection device (18); a record condition determination device (19); and an output device (20). The applied voltage setting device (11) and the applied time length setting device (12) set a voltage and a time applied to a probe (31) of the record device (15), respectively. The dot radius of a polarization domain 38, which is recorded at the record device (15), is measured at the dot radius measurement device (16), and the optimum polarization domain (38) is obtained at the optimum dot radius detection device (18). The applied voltage and the applied time length which have formed the polarization domain (38) are extracted as an optimum record condition.

A phase-change recording/reproduction head includes: a probe consisting of a recording/reproduction electrode, an insulation layer arranged on the tip portion of the recording/reproduction electrode, and a resistor arranged on the insulation layer; and a return electrode arranged around the probe. During recording, voltage corresponding to the recording data is applied to the resistor so that the phase change recording medium is changed from a crystalline state to an amorphous state. During reproduction, FM-modulated frequency of an oscillator oscillating according to the capacity corresponding to the dielectric constant of the crystalline state and the amorphous state is demodulated, thereby reproducing data with a high SN ratio.

An information storage apparatus includes a recording medium and a head. The recording medium has an electrode layer, a ferroelectric film that is stacked on the electrode layer, and a semiconductor layer that is stacked on the ferroelectric film. The head has a semiconductor probe for forming a dielectric polarization on the ferroelectric film to record information and reproducing information from the dielectric polarizations on the ferroelectric film by making a p-n junction with the recording medium. Thus, it is possible to manufacture a small-sized information storage apparatus which is capable of repeatedly recording and reproducing information at a high speed.

The present invention includes a method and apparatus for storing data. Accordingly, a first aspect of the present invention is a data storage device. The data storage device includes a conduction barrier, a probe tip mounted on a suspension mechanism, a voltage source coupled to the suspension mechanism for emitting a current of electrons through the conduction barrier, a sensing mechanism for sensing a magnitude of the emitted current wherein the magnitude of the current of electrons emitted through the conduction barrier is based on a distance between the probe tip and the sensing mechanism.

A dielectric recording/reproducing apparatus is provided with: a probe for applying an electric field to a dielectric material; a return electrode for returning the high frequency electric field for data reproduction; an inductor placed between the probe and the return electrode; an oscillator which oscillates at a resonance frequency determined according to the inductor and a capacitance formed in the dielectric material just under the probe; a switch for switching circuit connections depending on whether data recording is performed and data reproducing is performed; a recording signal input device for converting data to be recorded to generate a recording signal; a direct current voltage generation device for generating a direct current bias voltage to be applied to the dielectric material; a frequency-amplitude demodulator for demodulating an oscillation signal of the oscillator having the frequency that is changed depending on the capacitance owned by the dielectric material just under the probe; and a signal detector for detecting data from the demodulated signal.

A dielectric reproducing apparatus is provided with: a probe for applying an electric field to a dielectric material of a dielectric recording medium; a return electrode for returning the electric field applied from the probe; an inductor placed between the probe and the return electrode; an oscillator which oscillates at a resonance frequency determined from the inductor and a capacitance formed in the dielectric material just under the probe; an alternating current (AC) signal generation device for generating an AC signal which is applied to the probe; a frequency modulation (FM) demodulator for demodulating a FM modulation signal modulated by the capacitance corresponding to the polarization state owned by the dielectric material just under the probe; and a phase-shift keying (PSK) demodulator for reproducing data from the demodulated signal.

A dielectric recording/reproducing head is provided with: a probe; a return electrode for returning a high-frequency component of an electric field applied from the probe; and bias electrodes, which are placed under the return electrode. By applying a voltage stronger than a coercive electric field between the probe and each of the bias electrodes, polarization domains are formed which have polarization directions parallel to a surface of a dielectric recording medium. The polarization directions are determined by selecting the bias electrode to which the voltage is applied, and four types of data are recorded on a predetermined site of the dielectric recording medium, which allows multivalued recording. Moreover, the polarization directions of the polarization domains are detected by an electric field which is formed by applying a voltage between the bias electrodes and which is parallel to the surface of the dielectric recording medium, causing data to be read out.

A read/write arrangement for a contact probe storage arrangement or the like, has a cantilever disposed with a medium which is movable relative to the cantilever; a device associated with one of the cantilever and the medium which is configured to be responsive to changes in electrical field between the medium and the cantilever caused by a change in distance between the medium and the cantilever; a heater disposed on the cantilever for heating the medium and for inducing localized topographical changes which represent bits of data; and a circuit which electrically interconnects both of the device and the heater.

An integrated read/write head structure saves and retrieves saved data stored in storage locations on a ferroelectric optical storage medium. A first ultra-violet light emitting diode generates a single beam for exciting the electrons of a ferroelectric molecule of the optical storage medium. An induced electric field transducer orients the ferroelectric molecules potential difference during saving data. A second ultra-violet light emitting diode generates a single beam and a silicon photo diode detects the reflected ultra-violet light from a ferroelectric molecule.

A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.