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235results about "Naphthalimide/phthalimide dyes" patented technology

Perylene n-type semiconductors and related devices

Mono- and diimide perylene and naphthalene compounds, N- and core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
Owner:DARPA

Perylene n-type semiconductors and related devices

Mono- and diimide perylene and naphthalene compounds, N- and core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
Owner:DARPA

Donor-receptor type conjugated polymer containing dithiophen b pyrrole, preparation method and application thereof

The invention relates to a donor-recipient typed conjugated polymer containing two thiofuran and pyrrole and the preparation method and applications thereof. Using a construction mode of donor-recipient typed co polymerization for preparing the conjugated polymer can absorb action spectrum, cover UV-Visible and near infrared region to fully use sunlight. The donor uses a constitution unit of two thiofuran and pyrrole with a good plane performance, high density of electron cloud and easy preparation. The preparation of the conjugated polymer is easy, with absorbing spectrum in the UV-Visible and near infrared region of 300 to1000nm and the energy transforming efficiency being 3 percent. The performances of prepared solar batteries are respectively: white light (light intensity of 100mW / cm<2> ) irradiating, the open-circuit voltage is equal to 0.37 to 0.54 V; the short circuit current is equal to 6.69 to 13.8mA / cm<2>; the packing factor is equal to 0.35 to 0.44; and the efficiency of energy transformation is equal to 1 to 3 percent.
Owner:CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI

Diimide-based semiconductor materials and methods of preparing and using the same

ActiveUS7902363B2Conductivity maximizedOptimized film morphology and microstructureOrganic chemistryDischarge tube luminescnet screensSemiconductor materialsOptoelectronics
Diimide-based semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the diimide-based semiconductor materials also are provided.
Owner:FLEXTERRA INC

Method for the Determination of the Concentration of a Non-Volatile Analyte

The invention relates to a method for the determination of the concentration of a non-volatile analyte in an aqueous sample medium, with the use of an optical sensor which contains a luminescent dye and is calibrated at the user site by means of a single-point-calibration. To enable the user to completely dispense with all calibration media a luminescence measurement value is obtained at the user site with the sensor in contact with the aqueous or bloodlike sample medium, which value is referenced to the relative characteristic obtained at the factory site and to a measured dry calibration value obtained at the user site, the concentration of the non-volatile analyte being deduced from these data.
Owner:ROCHE DIAGNOSTICS OPERATIONS INC

Diimide-based semiconductor materials and methods of preparing and using the same

Diimide-based semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the diimide-based semiconductor materials also are provided.
Owner:FLEXTERRA INC

N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
Owner:EASTMAN KODAK CO

N,N'-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
Owner:EASTMAN KODAK CO

Sulfoderivatives of acenaphtho[1,2-b]quinoxaline, lyotropic liquid crystal and anisotropic film on their base

The present invention provides a series of new chemical compounds, lyotropic liquid crystal systems, materials, blends, mixtures, namely acenaphtho[1,2-b]quinoxaline sulfoderivatives of the general structural formula:wherein n is an integer in the range of 1 to 4; m is an integer in the range of 0 to 4; z is an integer in the range of 0 to 6, and m+z+n≦10; X and Y are individually selected from the group consisting of CH3, C2H5, OCH3, OC2H5, Cl, Br, OH, OCOCH3NH2, NHCOCH3, NO2, F, CF3, CN, OCN, SCN, COOH, and CONH2; M is a counterion; and j is the number of counterions in the molecule.
Owner:NITTO DENKO CORP

Organic semiconducting compositions and n-type semiconductor devices

An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.
Owner:EASTMAN KODAK CO

Method of making n-type semiconductor devices

An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.
Owner:EASTMAN KODAK CO

Fluorescent metal ion indicators with large stokes shift

The present invention provides fluorogenic compounds for the detection of target metal ions wherein the compounds exhibit a Stokes shift greater than 50 nm and the detectable signal is modulated by photoinduced electron transfer (PET). The present compounds consist of three functional elements, the ion sensing moiety (chelating moiety), the reporter moiety (fluorophore or fluorescent protein) and spacer or linker between the sensing and reporter moieties of the present compound that allows for PET upon binding of a metal ion and excitation by an appropriate wavelength.
Owner:MOLECULAR PROBES

Naphthalimide fluorochrome and its preparation and application

The invention belongs to the technical field of fine chemicals and relates to a naphthalimide fluorochrome and its preparation and application. According to the invention, the naphthalimide fluorochrome is a fluorescence molecular probe which is designed and synthesized by PET mechanism and used in detecting environmental viscosity changes and can be used to carrying out two-photon ratio imaging and lifetime imaging on viscosity changes in cells. The naphthalimide fluorochrome provided by the invention has advantages of simple synthesis, mild synthesis condition, good photostability and the like, and is not sensitive to pH, polarity and biomacromolecules. Thus, the naphthalimide fluorochrome can be used to detect viscosity distribution in cells. In addition, it is reflected through two-photon ratio imaging that viscosity in a lysosome is the largest in a cell. Fluorescence ratio detection can overcome errors caused by only being dependent on fluorescence intensity changes. On the other hand, through medical stimulation on cells, viscosity changes in cells can be detected. Through fluorescence lifetime, values of viscosity changes can be reflected more visually. The naphthalimide fluorochrome has wide application value in the field of biology and environment.
Owner:DALIAN UNIV OF TECH

N-type semiconductor materials in thin film transistors and electronic devices

A thin film transistor comprises a layer of organic semiconductor that comprises an N,N′-1,4,5,8-naphthalenetetracarboxylic acid diimide having at least one cycloalkyl group having a fluorinated substituent at its 4-position that adopts an equatorial orientation in the trans configuration of the cycloalkyl group and an axial orientation in the cis configuration of the cycloalkyl group. Such transistors can be a field effect transistor having a dielectric layer, a gate electrode, a source electrode and a drain electrode. The gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material.
Owner:EASTMAN KODAK CO

Naphthalimide fluorescent dichroic dye containing aromatic ester group and application thereof

The invention relates to a naphthalimide fluorescent dichroic dye containing an aromatic ester group and an application thereof, belonging to the field of display materials. In the naphthalimide fluorescent dichroic dye containing an aromatic ester group, naphthalimide is used as the parent body, and an ester group is introduced to 4-site to be directly connected with the parent body so as to achieve negative fluorescent dichroism. The dye has the advantages of novel structure, easy acquisition of raw materials and simple synthesis method. Tests show that this series of dye emits vivid blue fluorescence, the maximum emission wavelength is 405nm, the fluorescence quantum yield is 0.44-0.70, better dichroism can be indicated in liquid crystal MLC6237-01 epsilon, the absorption order parameter is -0.20- -0.23, the dichroic ratio is 2.0-2.3, the fluorescent order parameter is -0.37- -0.38, and the fluorescent dichroic ratio is 5.2-5.7.
Owner:DALIAN UNIV OF TECH

Water soluble fluorescent or colored dyes and methods for their use

Compounds useful as fluorescent or colored dyes are disclosed. The compounds have the following structure (I): including stereoisomers, salts and tautomers thereof, wherein R1, R2, R3, L1, L2, L3, L4, L5, L6, M1, M2, A, q, w and n are as defined herein. Methods associated with preparation and use of such compounds are also provided.
Owner:SONY CORP

Liquid crystalline organic semiconductor material and organic electron device

A liquid crystalline organic semiconductor material, having a compound having at least one bonding form selected from the group consisting of (p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue), and (n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue).
Owner:FUJIFILM CORP

N-type semiconductor materials for thin film transistors

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
Owner:EASTMAN KODAK CO

Thio/oxo-naphthalimide compound and application thereof

The invention provides a thio / oxo-naphthalimide compound and application thereof. The compound has a structure shown as a general formula I. The compounds are capable of realizing competitive binding and antagonism of Bcl-2 and Mcl-1 proteins in vitro and in cells so as to induce cell apoptosis, and refer to a type of apoptosis inducers and antitumor compounds with extremely high activities. In addition, the derivative designed based on the compound can serve as a bifunctional molecule and is capable of recognizing, separating, enriching and realizing fluorescence detection of Bcl-2 family proteins; or the derivative can serve as a PROTAC bifunctional complex for selectively degrading the Bcl-2 and Mcl-1 proteins in the cells, so that the level of the Bcl-2 family proteins in living cells is regulated. The structural formula is as shown in the specification.
Owner:DALIAN UNIV OF TECH

Method for the deposition of an organic material

The present invention relates to a method for the deposition of at least one layer of an organic material on a substrate by (a) providing a source of a solid organic material in an atmosphere at a pressure comprised between 50 and 200 kPa, (b) heating said organic material to a first temperature to produce a vapor of said organic material, (c) exposing at least one surface of a substrate having a second temperature lower than said first temperature to said vapor to deposit organic material from said vapor onto said at least one surface of said substrate.
Owner:CLAP CO LTD

N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
Owner:EASTMAN KODAK CO

N-type semiconductor materials in thin film transistors and electronic devices

A thin film transistor comprises a layer of organic semiconductor that comprises an N,N′-1,4,5,8-naphthalenetetracarboxylic acid diimide having at least one cycloalkyl group having a fluorinated substituent at its 4-position that adopts an equatorial orientation in the trans configuration of the cycloalkyl group and an axial orientation in the cis configuration of the cycloalkyl group. Such transistors can be a field effect transistor having a dielectric layer, a gate electrode, a source electrode and a drain electrode. The gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material.
Owner:EASTMAN KODAK CO
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