The invention discloses a level shift circuit suitable for a GaN high-speed gate drive circuit, and belongs to the technical field of
power management. Gate drive
control signal transmission is carried out by using a
voltage-to-current-to-
voltage structure, so that the rail-to-rail output capability is realized, and the situation of
signal delay and even loss caused by the fact that the
voltage ofa switch node of the GaN high-speed gate drive circuit is negative in
dead time can be prevented; A dynamic current
branch is adopted to carry out fast voltage transient protection, a common-mode
transient noise interference resisting module is adopted to carry out anti-floating power supply rail dv / dt
crosstalk protection, and the high CMTI capacity of an input end and an intermediate node of alevel shift circuit is achieved. A
positive feedback latch module for
limiting current is used for latching the current as an output maintaining structure. According to the level shift circuit, the
transmission delay of the level shift circuit is reduced, high-speed
signal transmission is realized, a low-resistance access and
positive feedback are provided to prevent circuit output from being interfered by high dv / dt capability of the floating power supply rail, so that the high CMTI capability of the output end of the level shift circuit is realized, and the reliability of the circuit is improved.