The invention provides a storage unit of a novel low-power-consumption static random access memory, which is characterized by comprising five word lines and four bit lines, the five word lines are respectively a word line I, a word line II, a word line III, a word line IV and a word line 5, and the four bit lines are respectively a bit line I, a bit line II, a bit line III and a bit line IV. Compared with the most advanced technology, energy consumption is reduced to 24.5% of original energy consumption, and the method has the advantages that the characteristic that cmos channel current and grid voltage are positively correlated is utilized, and a set of analog voltage values serve as the result of driving a SRAM through the grid voltage, so that in the same starting time, the voltage analog value on the bit line represents the multiplication result.