3667 results about "Magnetic components" patented technology

An apparatus for replacing a cardiac valve having at least two native valve leaflets includes an expandable support member with oppositely disposed first and second ends and a main body portion extending between the ends. The first and second ends respectively include a plurality of upper and lower wing members respectively having first and second magnetic components. The wing members extend from the main body portion and are spaced circumferentially thereabout. Secured within the main body portion is a prosthetic valve having at least two valve leaflets. The second end further includes at least two strut members spaced apart from each other and attached to at least one commissural section of the prosthetic valve. The magnetic components are magnetically attracted to one another so that, when the apparatus is placed in the valve annulus, the wing members are pulled toward one another to secure the prosthetic valve in the annulus.

A method and system for providing a magnetic memory is included. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.

A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).

A method and system for providing a magnetic element capable of being written in a reduced time using the spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a ferromagnetic pinned layer, a nonmagnetic intermediate layer, and a ferromagnetic free layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic intermediate layer resides between the pinned layer and the free layer. The free layer has a magnetization with an easy axis in a second direction. The first direction is in the same plane as the second direction and is oriented at an angle with respect to the second direction. This angle is different from zero and π radians. The magnetic element is also configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

A magnetic element that can be used in a memory array having high density includes a pinned layer, a half-metallic material layer, a spacer (or a barrier) layer and a free layer. The half-metallic material layer is formed on the pinned layer and preferably has a thickness that is less than about 100 Å. The half-metallic material layer can be formed to be a continuous layer or a discontinuous on the pinned layer. The spacer (or barrier) layer is formed on the half-metallic material layer, such that the spacer (or barrier) layer is nonmagnetic and conductive (or insulating). The free layer is formed on the spacer (or barrier) layer and has a second magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element.

A method and system for providing a magnetic element capable of being written using spin-transfer effect while being thermally stable and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first, second and third pinned layers, first and second nonmagnetic layers, a free layer and a nonmagnetic spacer layers. The first, second and third pinned layers are ferromagnetic and have first, second and third magnetizations pinned in first, second and third directions. The first and second nonmagnetic layers include first and second diffusion barriers, respectively. The first and second nonmagnetic layers are between the first and second pinned layers and the second and third pinned layers, respectively. The first and second pinned layers and the second and third pinned layers are antiferromagnetically coupled. The nonmagnetic spacer layer is conductive and resides between the free layer and the third pinned layer. In addition, performance can be further improved by doping Co containing ferromagnetic layers with Cr and/or Pt.

A method for providing a magnetic element is disclosed. The method includes providing at least one magnetic element layer and providing a hard mask structure for masking a portion of the at least one magnetic element layer. The hard mask structure is made from hard mask material(s) that are etchable for defining the hard mask structure. The hard mask structure also acts as a mask during definition of a width of the magnetic element. The method also includes defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask. The hard mask structure preferably acts as a polishing stop for a planarization step, such as a chemical mechanical polish, polishing resistant structures might be provided to improve planarization of a magnetic memory incorporating the magnetic element.

A magnetic latch for a display of a laptop computer is disclosed. The latch uses magnetic attraction to maintain the display closed and uses magnetic repelling forces to pop-up the display when opened. The latch includes one or more magnetic elements in the body of the laptop and at least one magnetic element in the display. When the display is closed, the magnet element in the display is positioned adjacent the magnet element in the body having an opposite polarity so that the magnet elements are attracted to one another. To pop-up the display, the user moves the magnetic element in the display so that it meets the magnetic pole in the body having the same polarity. When these meet, the repelling force between them causes the display to open slightly so that a user can then readily open the display.

A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.

A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes a magnetic element and a selection transistor. The magnetic element may be programmed using spin transfer induced switching by a write current driven through the magnetic element. The selection transistor includes a source and a drain. The plurality of magnetic storage cells are grouped in pairs. The source of the selection transistor for one magnetic storage cell of a pair shares the source with the selection transistor for another magnetic storage cell of the pair.

A magnetic latch for a display of a laptop computer is disclosed. The latch uses magnetic attraction to maintain the display closed and uses magnetic repelling forces to pop-up the display when opened. The latch includes one or more magnetic elements in the body of the laptop and at least one magnetic element in the display. When the display is closed, the magnet element in the display is positioned adjacent the magnet element in the body having an opposite polarity so that the magnet elements are attracted to one another. To pop-up the display, the user moves the magnetic element in the display so that it meets the magnetic pole in the body having the same polarity. When these meet, the repelling force between them causes the display to open slightly so that a user can then readily open the display.

A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes at least one magnetic element and a plurality of selection transistors. The at least one magnetic element is capable of being programmed using spin transfer induced switching by a write current driven through the at least one magnetic element. The at least one selection transistor is configured to allow the magnetic element to be alternately selected for writing and reading. Architectures for reading and writing to the magnetic storage cells are also described.

A generally cylindrical rotor very closely confined between two rigid thrust bearing surfaces is radially suspended by an array of attracting or repelling magnets or by a combination of permanent magnets and ring shaped members composed of ferromagnetic material. The geometry permits very small spacing between magnetic components to achieve high radial stiffness. High magnetic axial forces exerted between the rotor and stationary component on one end of the rotor are counter-balanced by equal and opposite forces at the other end of the rotor. Precise positioning of the rotor in the location where the opposing axial magnetic forces counterballance each other yields a net magnetic axial force on the rotor of near zero, hence the reference to this as the null position. Wear resistant mechanical thrust bearings confine the rotor axially to maintain this position during rotatioin. Precisely balance the magnetic axial forces in the proper geometry with relation to the mechanical thrust bearings. Blood pumps utilizing this type of bearing are disclosed, including both axial flow pump and centrifugal flow pump configurations with high flow washing of the junction of the rotating and stationary parts to prevent thrombus accumulation.

A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and a plurality of unidirectional polarity selection devices. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The unidirectional polarity selection devices are connected in parallel and such that they have opposing polarities. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.