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Preparation method and application of polyimide varnish

A technology of polyimide and varnish, which is applied in the direction of coating, etc., can solve the problems of lack of actual data support, no application example support, and unfavorable resin imidization in the application of insulation performance, and achieve simple and easy operation of the curing process and production Low cost, non-deliquescent effect

Inactive Publication Date: 2021-04-06
武汉市美克亚胺科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The patent (CN 104194618B) uses 4,4'-diaminodiphenyl ether, the silicon-containing monomer is mixed and dissolved, and then 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3- Tetramethyldisiloxane dianhydride and aromatic dianhydride monomers are used to obtain polyimide solution, and the polyimide film material is obtained by vacuum heating and curing at a high temperature of 300° in a muffle furnace. This method involves two or more silicon-containing Monomer, high cost of raw materials, large investment in vacuum equipment, muffle furnace is not conducive to the complete imidization of resin, the specific insulation performance of this film material and the application in microelectronics and other aspects lack actual data support
[0009] Xu Yong et al. (CN104945626) first synthesized polyamic acid with small molecular weight and large molecular weight respectively, and then mixed them with silane end-capping agent and imidization catalyst to obtain a high-adhesion coating glue. This method is due to the prepared polyamic acid The molecular weight distribution of amic acid is wide, and the length of the molecular structure is different, resulting in poor uniformity of mechanical properties, low storage stability, and no application examples to support

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030]10.96g of 1,3-bis(4-aminophenoxy)benzene, 12.61g of 4,4'-bis(4-amino-2-trifluoromethylphenoxy)biphenyl and 1,3-bis( Add 2.48g of 3-aminopropyl)-1,1,3,3-tetraphenyldisiloxane into 250g of N-methylacetamide and stir. After the three are completely dissolved, add 2,3,3', 29.42 g of 4'-biphenyltetracarboxylic dianhydride and the remaining 45 g of N-methylacetamide. Under the protection of argon at a temperature of 10-20°C, the reaction was continuously stirred for 20 hours to obtain a light yellow viscous liquid. Filter the varnish multi-layer sand core and cover it on the surface of components by drip coating or roller coating, and then use a stepwise heating method such as drying tunnel to cure, and measure its electrical and thermal properties according to the standard to obtain the forward peak voltage V FM 1.05V, reverse repetitive peak current I RRM1 0.27uA, reverse repetitive peak current I RRM2 110uA, reverse non-repetitive surge current I RSM 35A, thermal resist...

Embodiment 2

[0032] 13.26g of 1,3-bis(4-aminophenoxy)benzene, 15.13g of 4,4'-bis(4-amino-2-trifluoromethylphenoxy)biphenyl and 1,3-bis( Add 1.9g of 3-aminophenyl)-1,1,3,3-tetramethyldisiloxane into 300g of N-methylacetamide and stir. After the three are completely dissolved, add 2,3,3', 35.31 g of 4'-biphenyltetracarboxylic dianhydride and the remaining 48 g of N-methylpyrrolidone. Under the protection of argon at a temperature of 10-20°C, the reaction was continuously stirred for 20 hours to obtain a light yellow viscous liquid. Filter the varnish multi-layer sand core and cover it on the surface of components by drip coating or roller coating, and then use a stepwise heating method such as drying tunnel to cure, and measure its electrical and thermal properties according to the standard to obtain the forward peak voltage V FM 1.08V, reverse repetitive peak current I RRM1 0.35uA, reverse repetitive peak current I RRM2 122uA, reverse non-repetitive surge current I RSM It is 53A, the th...

Embodiment 3

[0034] 10.43g of 1,3-bis(4-aminophenoxy)benzene, 16.65g of 4,4'-bis(4-amino-2-trifluoromethylphenoxy)biphenyl and 1,3-bis( Add 2.73g of 3-aminopropyl)-1,1,3,3-tetramethyldisiloxane into 300g of N-methylpyrrolidone and stir. After the three are completely dissolved, add 2,3,3',4 32.36 g of '-biphenyltetracarboxylic dianhydride and the remaining 34 g of N-methylpyrrolidone. Under the protection of argon at a temperature of 10-20°C, the reaction was continuously stirred for 20 hours to obtain a light yellow viscous liquid. Filter the varnish multi-layer sand core and cover it on the surface of components by drip coating or roller coating, and then use a stepwise heating method such as drying tunnel to cure, and measure its electrical and thermal properties according to the standard to obtain the forward peak voltage V FM 1.10V, reverse repetitive peak current I RRM1 0.52uA, reverse repetitive peak current I RRM2 271uA, reverse non-repetitive surge current I RSM It is 72A, the...

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Abstract

The invention discloses a preparation method and the application of polyimide varnish. The method comprises the steps of dissolving the refined aromatic diamine and aliphatic diamine into the refined organic solvent, then adding the refined aromatic dianhydride in batches, and stirring and reacting for several hours under the protection of low-temperature inert gas to obtain polyimide varnish; after the varnish is filtered for multiple times, covering the surfaces of microelectronic devices with the varnish such as rectifiers, diodes, triodes, high-power silicon controlled rectifiers, high-voltage silicon stacks, thyristors and the like and large-scale integrated circuit patterns by adopting methods such as drop coating, roller coating, silk-screen printing and the like, and high-insulation, high-strength and then obtaining low-expansion electronic components through stepped heating and curing. The method has the advantages of accessible raw materials and simple operation, and is suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to a preparation method and application of a polyimide varnish, in particular to the preparation and application of polymer materials in the field of electronic information. Background technique [0002] Polyimide has the characteristics of high temperature resistance, low temperature resistance, corrosion resistance, high insulation, radiation resistance, moisture resistance, chemical corrosion resistance, low dielectric constant, low dielectric loss and excellent mechanical properties. Coating protection, ball making process of micro solder balls, signal line distribution of advanced microelectronic packaging, chip surface passivation in semiconductor manufacturing process, interlayer insulation of multilayer interconnection structure and manufacturing process of liquid crystal flat panel display, etc. Foreground, specific applications involve the surface of microelectronic devices such as rectifiers, diodes, triodes, high-power...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D179/08C08G73/10
CPCC08G73/1003C08G73/1042C08G73/106C08G73/1075C09D179/08
Inventor 戴美竹
Owner 武汉市美克亚胺科技有限责任公司
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