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Preparation method for large-size slice-shaped and ultrahigh-heat-conductivity diamond/copper composite material

A composite material and composite material component technology is applied in the field of preparation of large-sized flake-shaped ultra-high thermal conductivity diamond/copper composite materials, which can solve the problems of poor interface bonding strength and low diamond/copper thermal conductivity, and achieve interface bonding. Good, good thermal expansion coefficient, uniform distribution effect

Active Publication Date: 2020-08-07
哈尔滨锦威科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the technical problems of low thermal conductivity and poor interfacial bonding strength of the diamond / copper composite material prepared by the existing method, and proposes a preparation method of a large-size flake-shaped ultra-high thermal conductivity diamond / copper composite material

Method used

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  • Preparation method for large-size slice-shaped and ultrahigh-heat-conductivity diamond/copper composite material
  • Preparation method for large-size slice-shaped and ultrahigh-heat-conductivity diamond/copper composite material
  • Preparation method for large-size slice-shaped and ultrahigh-heat-conductivity diamond/copper composite material

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specific Embodiment approach 1

[0033] Specific Embodiment 1: The preparation method of the large-size flake-shaped ultra-high thermal conductivity diamond / copper composite material in this embodiment is carried out according to the following steps:

[0034] 1. Fill the diamond particles coated with the metal film in the cavity of the graphite mold to obtain a preform; the filling amount of the diamond particles coated with the metal film is 60% to 85% of the volume of the graphite mold cavity;

[0035] 2. Place the prefabricated body in the crucible, place the block of pure copper on the upper part of the prefabricated body in the crucible, and place the crucible in the air pressure infiltration furnace;

[0036] 3. Preheat the prefabricated body to 1000-1050°C in an argon protective atmosphere and keep it warm for 1-5 hours to complete the microstructure control of the interface layer material;

[0037] 4. Under the protective atmosphere, raise the temperature of the pressure infiltration furnace to 1100-1...

specific Embodiment approach 2

[0046] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is: the diamond particles coated with a metal film are described in step 1, and the metal film on the diamond particles coated with a metal film is prepared by a magnetron sputtering method. Before magnetron sputtering, pickling and alkali washing are carried out on the diamond particles in sequence until the surface roughness is 50nm-200nm;

[0047] The magnetron sputtering temperature is 100-400°C;

[0048] The particle size of the diamond particles is one of 90-110 μm, 110-400 μm, or a mixture of two in any proportion, wherein the diamond particles are single crystal diamond particles; the diamond-copper composite prepared by using 90-110 μm diamond particles The thermal conductivity of the material component is 750-1000W / mK, and the thermal conductivity of the diamond-copper composite material component prepared by using 110-400μm diamond particles is 800-1300W / mK. The thermal c...

specific Embodiment approach 3

[0050] Specific embodiment three: the difference between this embodiment and specific embodiment two is: the specific process of pickling is: soaking in aqua regia at room temperature for 3 to 5 hours; the specific process of alkali cleaning is: at a concentration of 0.05- Soak in 5g / mL sodium hydroxide solution at room temperature for 3-5 hours.

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Abstract

The invention provides a preparation method for a large-size slice-shaped and ultrahigh-heat-conductivity diamond / copper composite material and relates to the preparation method for the diamond / coppercomposite material. The purpose of the preparation method for the large-size slice-shaped and ultrahigh-heat-conductivity diamond / copper composite material is to solve the problems of the low heat conductivity and the poor interfacial bonding strength of the diamond / copper composite material. The preparation method comprises the steps that diamond particles coated with metal films are filled intoa mold cavity of a graphite mold to obtain a prefabricated body; and the prefabricated body is placed into a crucible, block-shaped pure copper and copper alloy are placed at the upper portion of theprefabricated body inside the crucible to be placed into an air pressure leaching furnace, interfacial layer material tissue form adjusting and control are performed under an argon protective atmosphere, warming copper melting, heat preservation and pressure maintaining leaching are performed, and finally, pressure maintaining stepped cooling is performed. In an obtained composite material component, the diamond volume fraction is 60-85%, the heat conductivity reaches 1500 W / mK, the edge length reaches 60-130 mm, and the thickness reaches 0.2-4 mm. The preparation method for the large-size slice-shaped and ultrahigh-heat-conductivity diamond / copper composite material is suitable for preparing the high-heat-conductivity diamond / copper composite material.

Description

technical field [0001] The invention relates to a preparation method of a large-scale flake-like ultra-high thermal conductivity diamond / copper composite material. Background technique [0002] With the continuous improvement of the power and integration of various devices, traditional heat conduction and heat dissipation materials have gradually become difficult to meet the demand. As a new generation of thermal management materials, high thermal conductivity diamond / copper composite materials are characterized by their excellent thermal conductivity and low thermal expansion coefficient. , Widely used in integrated heat sinks, laser diode heat sink substrates, solid-state laser heat sinks, CPU heat sinks or heat sinks, high-power electronic device substrates (such as IGBT substrates), LED and HB-LED heat sinks, RF and microwave packaging Heat sinks, microelectronic packaging heat sinks, thermal management materials for high heat load electronic devices, and many other fiel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00C22C26/00C22C1/10
CPCC22C9/00C22C26/00C22C1/101C22C1/1036C22C1/1052
Inventor 武高辉芶华松林秀陈国钦王平平修子扬杨文澍张强
Owner 哈尔滨锦威科技有限公司
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