38results about How to "Suppression" patented technology

Disclosed is an image display device using the field sequential method and capable of more efficiently suppressing occurrence of color breakup. One frame period is configured from single-color lighting subframes and an extended subframe in which a multicolor light source can assume arbitrary states. A color breakup intensity calculation unit (462) calculates for each mixed color component a color breakup intensity representing susceptibility to color breakup. A light source control signal generation / output unit (464) controls the light sources such that the greater the color breakup intensity of the mixed color component with the greatest color breakup intensity, the greater the amount of said mixed-color component is included in the light emitted from a light source unit in the extended subframe. Here, when an arbitrary mixed color component is set as a target component, if there is a first pixel region to be displayed which contains the target component, then the greater the size of the target component in the first pixel region, the greater the color breakup intensity for that target component.

It is an object of the invention to discover a substance that effectively increases the production of adrenomedullin, as well as to provide an adrenomedullin production-enhancing agent utilizing this substance. The adrenomedullin production-enhancing agent is characterized by inclusion of a ginsenoside, a sanshool, and / or a shogaol as active ingredients.

In a method of making a dual work function gate electrode of a CMOS semiconductor structure, the improvement comprising formation of the dual work function gate electrode so that there is no boron penetration in the channel region and no boron depletion near the gate oxide, comprising:a) forming a gate oxide layer over a channel of a nMOS site and over a channel of a pMOS site;b) forming an undoped polysilicon layer over the gate oxide layer;c) masking the pMOS site, forming an a-Si layer over the nMOS site using a first heavy ion implantation, and implanting arsenic solely into the a-Si layer;d) masking the nMOS site formed by step c), forming an a-Si layer over the pMOS site using a second heavy ion implantation, and implanting boron solely into the a-Si regions;e) laser annealing the nMOS and pMOS sites for a short time and at an energy level sufficient to melt at least a portion of the a-Si but insufficient to melt the polysilicon; andf) affecting cooling after laser annealing to convert a-Si into polysilicon without gate oxide damage.

The invention discloses a dust removing method of a surface mine dumping plough. A mode that a mist-spraying dust removing method is combined with a spraying dust removing method is adopted. Accordingto the mist-spraying dust removing method, a dust removing air-assisted mist-spraying machine is mounted at the lower part of a discharging arm, and the dust removing air-assisted mist-spraying machine is mounted at the position, away from a material falling point by the 20-meter horizontal distance, of the lower part of the discharging arm. According to the spraying dust removing method, a nozzle is mounted at the head part of the discharging arm, and the nozzle is connected with a dust removing water pipeline. According to the dust removing method of the surface mine dumping plough, the mode that mist-spraying dust removing is combined with spraying dust removing is adopted and applied to a dust removing system of the surface mine dumping plough, spraying dust removing is used for discharging dust removing of the head part, the mist-spraying machine at the lower part of the discharging arm is mounted at the fixed position so as to ensure the facts that the mist-spraying distance isfixed relatively and the mist-spraying machine does not need to be moved and arranged frequently due to moving of the discharging arm, the dust removing method can play a better inhibiting effect on secondary flying dust generated after discharging of the dumping plough, and the practical effect is obvious.

The present invention provides a field sequential image display device and an image display method that more reliably suppress color breakup while sufficiently performing image display with high color reproducibility in the field sequential method. In a field-sequential liquid crystal display device in which each frame is constituted by a plurality of subframes composed of red, green, blue, and white (common colors) subframes, the image data conversion unit (30) is based on the adjustment coefficient (Ks) and The subframe allocation ratio (WRs) converts the input image data (D1) corresponding to red, green, and blue into driving image data (D2) corresponding to the plurality of subframes for each pixel. Alternatively using two distribution ratios as the distribution ratio (WRs), the function for calculating the second distribution ratio (WRsv2) is set so that the higher the adjusted brightness (brightness after enlargement and compression processing) (V) of the input image is, The smaller the distribution ratio (WRsv2) is, the larger it is.

The present invention provides a transport roadway support and traveling mechanism, which includes an advance support and a transport trough of a transfer machine, the advance support includes a main frame and a sub-frame, and the main frame and the sub-frame alternately travel to realize the overall advancement of the advance support, The base of the main frame is fixed to the transport tank of the transfer machine, and the base of the sub-frame is separately arranged from the transport tank of the transfer machine. The transport roadway support travel mechanism cancels the self-moving mechanism of the traditional transfer machine, and fixes the transport slot of the transfer machine and the main frame of the advanced support together. With the advancement of the advanced support, the main frame drags the transport slot of the transfer machine to move together. Realize no pressure relief support, better operability, simplified motion relationship, and effective control of the bottom drum.

The present invention provides a chip part manufacturing method comprising a separating process capable of suppressing deformation of chip parts, and also provides chip parts. It comprises a step of forming a plurality of frame-like void portions ( 32 ) in one main surface of substrate ( 30 ) and insulating resin layer ( 20 ) having a spiral void portion ( 40 ) disposed in the region thereof, a step of forming metal layer ( 36 ) in frame-like void portion ( 32 ) and spiral void portion ( 40 ) and on insulating resin layer ( 20 ), a step of polishing metal layer ( 36 ) at least up to the uppersurface of insulating resin layer and forming coil section ( 18 ) in spiral void portion ( 40 ), and a step of forming a metal layer for connecting chip parts to frame-like void portion ( 32 ), wherein the metal layer is melted and removed by using an etching agent to separate a plurality of chip parts connected to each other by a frame-like connection.