Disclosed are methods and apparatus for inspecting a
semiconductor sample. This
system comprises an illumination
optics subsystem for generating and directing an
incident beam towards a defect on a surface of a
wafer. The illumination
optics subsystem includes a
light source for generating the
incident beam and one or more polarization components for adjusting a ratio and / or a
phase difference for the
incident beam's
electric field components. The
system further includes a collection
optics subsystem for collecting
scattered light from the defect and / or surface in response to the incident beam, and the collection optics subsystem comprises an adjustable aperture at the
pupil plane, followed by a rotatable
waveplate for adjusting a
phase difference of
electric field components of the collected
scattered light, followed by a rotatable analyzer. The
system also includes a controller that is configured for (i) selecting a polarization of the incident beam, (ii) obtaining a defect scattering map, (iii) obtaining a surface scattering map, and (iv) determining a configuration of the one or more polarization components, aperture
mask, and rotatable ÂĽ
waveplate, and analyzer based on analysis of the defect and surface scattering map so as to maximize a defect
signal to
noise ratio,