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81results about How to "Inhibit false action" patented technology

Display and mobile device

The present invention provides a display device capable of suppressing light from a light source for backlight from leaking to the display area side through the inner side surface of the frame. The display device includes: a display panel including a display area; a frame for accommodating the display panel; a backlight light source arranged on the back side of the display panel; The light shielding portion is provided on the side end surface side of the display panel plane and partially protruded to include a light leakage suppression portion that suppresses the light source for the backlight.
Owner:SANYO ELECTRIC CO LTD

Mobile information terminal device and mobile telephone

A mobile information terminal is provided with an operation position detecting unit (37) for detecting a user's operation position based on an output of an electrostatic capacitance sensor (30) comprised of thin films with a plurality of electrodes to detect a electrostatic capacitance of each electrode, a directional input control unit (31) for detecting the movement of the operation position based on an output of the operation position detecting unit to generate a directional input signal, a key input unit (32) for detecting a user's pressing operation against an operation key pressing surface to generate a key input signal, a display (22) having a display screen, and a display control unit (34) for controlling a display position of image information in a display screen based on the directional input signal. At least a part of the thin film of the electrostatic capacitance sensor (30) is made to overlap with a part of the pressing surface of the operation key and the directional input control unit (31) judges whether to generate the directional input signal based on an operation position at movement starting time in the case of the detection of the operation position movement. Inthe case of the operation of the key disposed to overlap with an electrostatic pad, a mistake of the directional input for the movement of the screen display can be suppressed.
Owner:SHARP KK

Gesture input device and gesture input method

A gesture input device (100) comprises: a coordinate input detection unit (102) for sequentially detecting the coordinates corresponding to the positions of a user's hand; a gesture start detection unit (103) for detecting, from the detected first coordinate sequence, a component indicating a first hand motion intending the start of a gesture; a guiding image generation unit (104) for, when the component indicating the first hand motion is detected, generating a gesture guiding image for guiding the user to perform a gesture including a second hand motion; an intentional motion component detection unit (105) for detecting, as an intentional motion component, a component indicating the second hand motion from the second coordinate sequence detected after the gesture guiding image is displayed on a screen (108); and a control signal generation unit (106) for, when the intentional motion component is detected, detecting a component indicating the hand motion corresponding to the gesture from the second coordinate sequence and generating a control signal according to the detection result.
Owner:PANASONIC INTELLECTUAL PROPERTY CORP OF AMERICA

Semiconductor module

A semiconductor module is provided with three-phase upper arms (51, 53, 55) and lower arms (52, 54, 56), heat-dissipating plates (11, 12), a main circuit-side bus bar, an output terminal-side bus bar, a control terminal (14), and a resin mold part (18). The output terminal-side bus bar has U-phase to W-phase wiring layers (133-135) layered and arranged facing each other interposed by an insulating layer (130), and U-W terminals (13c-13e) for electrically connecting each of the U-phase to W-phase wiring layers and a load. There are an even number of U-phase to W-phase wiring layers.
Owner:DENSO CORP

Automatic battery safety protection system

InactiveUS20120043941A1Extend lifespan of batteryAvoid false actionElectric devicesSecondary cells charging/dischargingEmbedded systemPower management system
The present invention provides an automatic battery safety protection system, which includes at least one battery pack, a Micro-Electro-Mechanical System (MEMS), a battery management system and a power supply management system. The MEMS controls the battery pack to put it in a charge mode, a discharge mode or a sleep mode, and detects an environmental situation and transfers a detection result as an electronic signal. The battery management system is connected to the battery pack and supplies power to the battery pack. The power supply management system supplies power to the battery management system according to the electronic signal and controls the battery management system to make the battery pack take a corresponding action. The protection system of the present invention can achieve practical improvements such as protecting the battery pack system, extending the lifespan of the battery, and avoiding a false action.
Owner:DIGI TRIUMPH TECH

Semiconductor light emitting device

The present invention provides a semiconductor light emitting device which enables the semiconductor light emitting elements and a driving device to be configured on the same semiconductor substrate, and restrains the misoperation in the driving device. The semiconductor light emitting device comprises the semiconductor substrate defining a light-emitting area and a driving device area on a main surface; a laminating body configured to the driving device area from the light-emitting area continuously on the main surface of the semiconductor substrate, and possessing a structure formed by laminating an n-type semiconductor layer composed of an epitaxially growing nitrides semiconductor, an active layer and a p-type semiconductor layer orderly; an interlayer insulating film configured on the laminating body; a control transistor configured above the driving device area via at least one part of the laminating body and the interlayer insulating film and controlling the luminescence of the laminating body; and a shading film configured between the control transistor and the laminating body in the interlayer insulating film.
Owner:SANKEN ELECTRIC CO LTD

Imaging apparatus

The invention provides an imaging apparatus which can suppress error operation during automatic correction of unintelligibility during image shooting through simple processing, and accurately provide notification corresponding to the unintelligibility correction to a user. The imaging device (1) includes an imaging unit (10) for imaging light from a target area on an imaging element (14), an image processing unit (21) for processing a signal output from the imaging element (14) and outputting image information, and a storage unit (22) for storing a reference value of a parameter indicating a sharpness of the captured image. The image processing unit (21) acquires the measured value of the parameter according to the signal inputted by the imaging element (14), stores the measured value obtained at a specific time point as a reference value in the storage unit (22), and conduct sharp processing for the captured image according to the difference between the obtained measured value and the reference value stored in the storage unit (22). In addition, the image processing unit (21) outputs information indicating that the sharp processing has been performed to the output unit (26).
Owner:MITSUBOSHI DIAMOND IND CO LTD

Method of manufacturing semiconductor device

A memory transistor and a high breakdown voltage MOS transistor are easily formed on the same semiconductor substrate without changing the operational characteristics of the memory transistor. The process of forming the tunnel insulation film of the memory transistor and the process of forming the gate insulation film of the MOS transistor are performed separately. Concretely, an insulation film to be a part of the tunnel insulation film and a silicon nitride film are formed on the whole surface, and then the silicon nitride film in a MOS transistor formation region is selectively removed using a photoresist layer. Then, the MOS transistor formation region is selectively oxidized using the remaining silicon nitride film as an anti-oxidation mask to form the gate insulation film of the MOS transistor having a selected thickness.
Owner:SANYO ELECTRIC CO LTD

Timepiece

Provision of a timepiece which, although it can suppress a malfunction of the display body in the case, can lightly rotate the operation member causing the display body to operate in conjunction therewith, and which exhibits high level of reliability in waterproof performance around the operation member. To a case 12 to which a pipe 28 is fixed, there is mounted an operation member 41 conjunction-moving a display body 17 in the case 12 so as to be movable between an operating position and a setting position. One of the pipe 28 and a shaft portion 43 of the operation member 41 inserted into the same has a first annular contact surface 29, and a second annular contact surface 30 forming a diameter different from the diameter that the contact surface 29 forms, and an annular slope 31 extending between these contact surfaces. The other has an annular opposing surface 44 opposite each of the above surfaces. A packing 48 capable of elastic deformation and configured to effect waterproofing between the pipe 28 and the shaft portion 43 is mounted to the other so as to protrude from the annular opposing surface 44. At the operating position, the packing 48 is brought into contact with the annular contact surface forming a wide gap between itself and the annular opposing surface 44, and, at the setting position, the packing 48 is brought into contact with the annular contact surface forming a narrow gap between itself and the annular opposing surface 44.
Owner:SEIKO INSTR INC

Semiconductor device and method of producing same

A semiconductor device (1) provided with a P-type Si substrate (101), ESD protection element (1A), and protected element (1B). The ESD protection element (1A) is provided with a source N-type diffusion region (107A) and a high concentration P-type diffusion region (103). The high concentration P-type diffusion region (103) covers the bottom of the source N-type diffusion region (107A), is formed from below the source N-type diffusion region (107A) to below the gate electrode (106A), and has a higher P-type impurity concentration than the base region of the P-type Si substrate (101). The protected element (1B) is provided with a drain N-type diffusion region (108B) and a low concentration P-type diffusion region (104) which is contiguous to the drain N-type diffusion region (108B). The drain electrode (112A) of the ESD protection element (1A) and the drain electrode (112B) of the protected element (1B) are connected, and the high concentration P-type diffusion region (103) has a higher P-type impurity concentration than the low concentration P-type diffusion region (104).
Owner:PANASONIC CORP
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