Preparation method of 1550 nm waveband single photon source, single photon source and optical device

Abstract

The invention discloses a preparation method of a 1550 nm waveband single photon source, the single photon source and an optical device. The preparation method comprises the following steps: preparinga silicon oxide layer on a SiC wafer (0001) surface; carrying out ion implantation; bonding with another SiC substrate with a silicon oxide dielectric layer along the surface of the silicon oxide; carrying out annealing stripping, and transferring the SiC film to the SiC substrate; preparing a mask on the SiC film, and removing the mask pattern to expose a part of the SiC film; performing V ion implantation, and removing the mask region; preparing a C film, and activating a V ion doping method step; and transferring the SiC film to a substrate through ion implantation, and preparing a 1550 nmcommunication band single photon source. According to the invention, the problems that a 1550 nm light source of an existing photonics platform is difficult to prepare and a single photon source andan optical device are difficult to integrate are effectively solved, a 1550 nm communication light source with high uniformity and high quality is obtained on a SiC platform, and the single photon source and the device are integrated on the same platform.

Description

technical field [0001] The invention relates to the technical field of electronic information functional materials and devices, in particular to a preparation method of a 1550nm band single photon source, a single photon source and an optical device. Background technique [0002] As a representative material in the third generation of semiconductors, SiC (silicon carbide) combines a wide band gap (2.4eV-3.2eV), high physical strength (Mohs hardness 9.5, Knoop hardness 2480kg / mm 2 ), high thermal conductivity (480W / mK), high corrosion resistance, high melting point, high optical second-order third-order nonlinear coefficient, wide light transmission window (0.37-5.6μm), wide-area defect emission window (visible light to mid-infrared ) and many other excellent properties, it is an ideal material for integrating optical, nonlinear and optomechanical devices. High refractive index achieves high confinement of optical modes, which will bring greater flexibility in the field of d...

AI Technical Summary

Problems solved by technology

The 3C-SiC thin film is mainly deposited on the surface of Si substrate by means of atmospheric pressure chemical vapor deposition (APCVD) and reduced pressure chemical vapor deposition (RPCVD). The 3C-SiC thin film prepared by this method is mainly polycrystalline Thin film, crystal quality cannot reach single crystal

The former will cause device performance degradation due to ion implantation damage, while the latter has extremely poor control of film thickness due to the thinning process, and the film thickness deviation is large, which is likely to cause a large performance gap between devices and cannot be controlled.

In optical communication and quantum communication, 1550nm is the minimum loss wavelength in optical fiber transmission. Therefore, the preparation of 1550nm single photon source is of great significance. The light source and Si-based optical devices are integrated on the same platform. At present, discrete devices are used to form a complete system. The coupling loss is large, and it is difficult to apply in nonlinear optics.

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