Acceptor activation method for nitrogen adulterated ZnO

Abstract

The invention provides an activation method for a nitrogen-doped ZnO acceptor, belonging to the semiconductor material field and particularly taking the radio frequency plasma metal-organic chemical vapor deposition (MOCVD) technique as the late-annealing technique of the nitrogen-doped ZnO. The invention aims to overcome the defect that the nitrogen-doped p type ZnO is hard to acquire and provides a method that by utilizing the radio frequency plasma annealing technique, the nitrogen-doped ZnO undergoes the high temperature annealing in the nitrogen oxide plasma, thereby obtaining the highlyefficient and stable p type ZnO doping; because nitrogen and oxygen which are high in activity are formed in the atmosphere, the escape of the nitrogen in the nitrogen-doped ZnO can be prevented, andsimultaneously the desorption of the oxygen in the ZnO can also be prevented, and simultaneously the nitrogen acceptor in the nitrogen-doped ZnO is activated, thereby realizing the preparation of thep type ZnO and further realizing the preparation of an pn junction LED device of the ZnO.

Description

technical field [0001] The invention relates to a p-type ZnO doping technology and a method for nitrogen-doping a p-type ZnO thin film, which belongs to the technical field of semiconductor materials, and in particular to a method for using a radio frequency plasma process as a late-stage annealing of nitrogen-doped ZnO to activate N acceptors. Background technique [0002] ZnO is another new type of wide bandgap semiconductor material after GaN, which has higher exciton binding energy than GaN material, and can achieve efficient exciton-related emission at room temperature or even higher temperature. However, in order to realize the application in optoelectronic devices, the p-type doping of ZnO has always been a research hotspot. Because there are many intrinsic defects in ZnO, such as Zn gaps, 0 vacancies, etc., making undoped ZnO an n-type semiconductor material, and these defects have a strong self-compensation effect, so it is difficult to produce efficient and stable ...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention overcomes the disadvantage that high-quality nitrogen-doped p-type ZnO is difficult to obtain at present, and provides a kind of annealing technology assisted by radio frequency plasma, which performs high-temperature annealing of nitrogen-doped ZnO in a nitrogen oxide plasma environment, Thus obtaining a high-quality p-type ZnO doping method

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