Method for optimizing passivation of gallium nitride high-electron-mobility transistor

A high electron mobility, transistor technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as device performance, stability degradation, gallium nitride material surface damage, current collapse, etc., to reduce current collapse and reduce Effects of Interface Defects and Gate Leakage Reduction

Inactive Publication Date: 2020-01-07
XIAN JIAOTONG LIVERPOOL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, GaN high electron mobility transistors have the problem of poor interface states between GaN materials and traditional passivation layer materials.
In addition, in the process of depositing the passivation layer material by PECVD or ICPCVD, the plasma may damage the surface of the gallium nitride material
In the case of high field pressure, the electron trap between the gallium nitride material and the passivation layer material will capture the hot electrons generated under the high field, which will make the device prone to current collapse in high frequency and high voltage applications. Phenomenon, which degrades the performance and stability of the device

Method used

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  • Method for optimizing passivation of gallium nitride high-electron-mobility transistor
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  • Method for optimizing passivation of gallium nitride high-electron-mobility transistor

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Embodiment 1

[0035] A method for optimizing the passivation of GaN high electron mobility transistors includes:

[0036] First, use MOCVD equipment to sequentially grow a GaN channel layer, an AlGaN barrier layer, and a GaN capping layer on a silicon, sapphire, or silicon carbide substrate to form a GaN / AlGaN / GaN structure sample;

[0037] Second, the mesa of the active region is etched on the sample of the GaN / AlGaN / GaN structure, and the alloy electrodes of the source and drain regions are prepared on the mesa of the active region by electron beam evaporation, and the source and drain are at 700°C~900°C Perform rapid annealing in a nitrogen atmosphere at ℃ for 30s~60s to form an ohmic contact;

[0038] Third, place the sample after forming the source and drain electrodes in an acid solution with a concentration of 1% to 20% for 1 minute to 20 minutes to remove the natural oxide layer on the sample,

[0039] Fourth, after removing the natural oxide layer, put the sample into the ALD or P...

Embodiment 2

[0046] A method for optimizing the passivation of gallium nitride high electron mobility transistors, the steps are as follows:

[0047] 1. Use MOCVD to sequentially grow a GaN channel layer with a thickness of 0~6000nm, an AlGaN barrier layer with a thickness of 0~50nm, and a GaN cap layer with a thickness of 0~10nm on the substrate.

[0048] 2. On the GaN / AlGaN / GaN sample with the above structure, the active region mesa is formed by photolithography and ICP etching technology, and the ICP etching depth is 1~1000nm.

[0049] 3. Prepare source and drain alloy electrodes by electron beam evaporation of source and drain electrode materials, and perform rapid thermal annealing in a nitrogen atmosphere to form ohmic contacts.

[0050] 4. After the ohmic contact is formed, soak the sample in hydrochloric acid solution at room temperature to remove the natural oxide layer on the surface; rinse with deionized water after completion, and blow dry with nitrogen.

[0051]5. Put the sam...

Embodiment 3

[0058] as attached Figure 1-6 As shown, a method for optimizing the passivation of GaN high electron mobility transistors, the steps include:

[0059] (1) if figure 1 As shown, on the Si substrate, a GaN channel layer is first grown by MOCVD, a layer of AlGaN barrier layer of about 25nm is grown on it, and finally a GaN surface cap layer is grown.

[0060] (2) On the gallium nitride heterojunction substrate with the above structure, a mesa with a high active region of about 300nm is formed by photolithography and ICP etching technology.

[0061] (3) Photolithography is carried out on the prepared active area, and the source and drain electrode areas are photolithographically etched, and the four materials of Ti / Al / Ni / TiN (30nm / 120nm / 60nm / 60nm) are evaporated by electron beams, and prepared by lift-off process Metal electrodes for the source and drain regions. And perform rapid annealing in a nitrogen atmosphere at 860 °C for 40 seconds to form an ohmic contact, the cross-s...

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Abstract

The invention belongs to the field of semiconductor manufacturing and discloses a method for optimizing the passivation of a gallium nitride high-electron-mobility transistor. The method comprises thefollowing steps that: a gallium nitride epitaxial layer is grown on a substrate; etching is performed, so that an active region mesa can be formed; a source ohmic contact electrode and a drain ohmiccontact electrode are formed; a natural oxide layer on the surface of the gallium nitride material is removed; gallium oxide is deposited so as to serve as an intermediate layer of a passivation layerand a GaN cap layer; a device passivation layer is deposited on the gallium oxide intermediate layer; and the metal electrode of a gate is formed. With the method of the invention adopted, an interface defect between the gallium nitride cap layer and the passivation layer can be reduced; the passivation effect of the device is improved; the current collapse phenomenon of the gallium nitride high-electron mobility transistor is effectively inhibited; and the breakdown voltage of the device is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to the preparation of gallium nitride high electron mobility transistor (GaN HEMT), in particular to a method for passivating the surface of a GaN HEMT device. Background technique [0002] Gallium nitride semiconductor materials have remarkable characteristics such as large forbidden band, high carrier mobility, excellent thermoelectric conductivity and high breakdown field. It has broad prospects for development in the fields of optoelectronics, high-voltage, and high-frequency electronic devices. Gallium nitride high electron mobility transistor is a gallium nitride device formed by using the two-dimensional electron gas at the AlGaN / GaN heterojunction as a conductive channel. However, gallium nitride high electron mobility transistors have the problem of poor interface states between gallium nitride materials and traditional passivation layer materials. In addition, in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/28H01L21/335H01L29/06H01L29/423H01L29/51
CPCH01L29/66462H01L29/0653H01L29/0638H01L29/401H01L29/42312H01L29/517H01L21/022H01L21/0228
Inventor 蔡宇韬王洋刘雯赵策洲
Owner XIAN JIAOTONG LIVERPOOL UNIV
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